Allicdata Part #: | S29GL512P10TFCR20D-ND |
Manufacturer Part#: |
S29GL512P10TFCR20D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P10TFCR20D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
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S29GL512P10TFCR20D Application Field and Working Principle
The S29GL512P10TFCR20D is an efficient, high-performance memory module used in applications such as microprocessors, computer systems, and other embedded systems. It is an electrically erasable programmable read-only memory (EEPROM) device, which means it can be programmed and erased using a certain voltage level. The S29GL512P10TFCR20D is designed to store data long-term, offering high-speed programming and erasing capabilities.
The S29GL512P10TFCR20D is comprised of an array of 512K single bit cells organized into a single 512kb array. Furthermore, the device is organized into two separate sub-arrays, each with its own data path and control systems. Each sub-array consists of 256K single-bit cells. The device contains 8 bit-cells per row and 8,192 rows in each sub-array. The S29GL512P10TFCR20D has an adjustable row-level of erase and programming voltage which can be controlled by a built-in control register.
The S29GL512P10TFCR20D has a very broad range of applications. It is often used in digital signal processing (DSP) applications as a data storage element. The S29GL512P10TFCR20D is also well suited for use in remote sensing systems due to its low power consumption. Its high data retention and endurance make it a great choice for use in systems with harsh environmental conditions.
The S29GL512P10TFCR20D is capable of programming data at up to 1.1 megabits per second, and erasing it at up to 2 megabits per second. It also has an adjustable device-level erase-and-reprogram feature that can be used to maintain the device’s data integrity when transferring data from one device to another. The S29GL512P10TFCR20D has extensive protection features, such as an anti-fuse that can be used to protect the device’s programming and erase cycles, an error detection and correction (ECC) system, and over-temperature protection.
The S29GL512P10TFCR20D has a standard pinout, making it pin and socket compatible with a variety of existingmemory products. The device operates with a wide range of operating voltages, from 3.3 to 5.0 volts. It also has an adjustable soak time for programming and erasing, which can be set as low as 150µs, perfect for fast data transfer operations.
In conclusion, the S29GL512P10TFCR20D is a highly efficient and reliable memory module suitable for many different types of applications. Its high-speed programming and erasing capabilities make it an ideal choice for data transfer, while its wide range of protection features ensure the integrity of the data it stores. With its flexible pin, the S29GL512P10TFCR20D is a great option for system designers looking for reliable and efficient memory solutions.
The specific data is subject to PDF, and the above content is for reference
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