Allicdata Part #: | S29GL512P10TFI020-ND |
Manufacturer Part#: |
S29GL512P10TFI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P10TFI020 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
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S29GL512P10TFI020 is a 512Mb non-volatile memory device that belongs to the S29GL memory series. S29GL memory is a kind of non-volatile memory developed by Spansion Inc., which uses the latest floating-gate (FG) structures and advanced design techniques to provide cost-effective solutions to storage needs. With its high density, low power consumption and high performance, S29GL is an ideal choice for various applications, such as cellular phones and consumer electronics.
The S29GL512P10TFI020 features a low power MLC (multi-level cell) architecture and a high data integrity. It is based on a 3D floating gate structure, which improves the performance and reliability of the memory device. This device is capable of operating at speeds of up to 10 MHz. It is available in a 64-bump BGA package with a power saving feature that can reduce power consumption by up to 20%.
In terms of its application field, the S29GL512P10TFI020 is used in a variety of areas such as consumer electronics, automotive, industrial, medical and telecom fields. With its high speed, low power consumption and high reliability, it is used for data storage, program code storage and booting. Additionally, the device can also be used for flash file system applications.
The working principle behind the S29GL512P10TFI020 memory device is based on a floating gate structure that uses electrons to store data in memory cells. The electrons are trapped in the floating gate and released when the cell is energized. This storage technology allows the device to maintain data even in the absence of power, which makes it suitable for applications like battery-powered devices. Additionally, the device also uses advanced design techniques to reduce the effects of noise and improve data integrity.
In conclusion, the S29GL512P10TFI020 is a 512Mb non-volatile memory device that is used for a variety of applications. It is based on a floating gate structure and advanced design techniques that ensure data integrity and low power consumption. It is available in a 64-bump BGA package and features speeds up to 10 MHz. Given the combination of its features, it is an ideal choice in a variety of applications such as consumer electronics, automotive, industrial, medical and telecom fields.
The specific data is subject to PDF, and the above content is for reference
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