Allicdata Part #: | S29GL512P10TFIR10-ND |
Manufacturer Part#: |
S29GL512P10TFIR10 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P10TFIR10 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
Description
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The S29GL512P10TFIR10 is a type of memory that is used in many electronics applications. It is a Flash memory device, which means it is a type of non-volatile memory that stores information even when the power is turned off. This makes it ideal for applications where data needs to be retained for long periods.The S29GL512P10TFIR10 comes in two variants, one with an 8-bit width and another with a 16-bit width. It has matchable addresses and features an internal error correction code to ensure data reliability. This memory device is also backward compatible, so it can be used in older systems.The S29GL512P10TFIR10 is mainly used in embedded systems, medical applications, consumer electronics, and automotive applications. In embedded systems, it is often used to store and process data, as it is small and low power. It is also used in medical and consumer electronics because of its reliability. In automotive applications, it is used to store software and code protocols.In terms of working principle, the S29GL512P10TFIR10 uses a stacked gate structure and floating gate transistors. In this structure, the memory cells are arranged in a vertical stack, hence the name. This structure allows high densities of bits to be stored in the same amount of space, which amplifies the capacity of the memory. To access the data stored in the cells, the NAND flash memory device uses an array of transistors, source lines, and bit lines to read and write data.The S29GL512P10TFIR10 has several features that make it ideal for many different applications. It has a low power consumption, a high storage capacity, and a long life span. Additionally, this memory device is designed to operate over a wide temperature range and is also resistant to shock and vibration.In conclusion, the S29GL512P10TFIR10 is a Flash memory device that is used in a wide range of applications. It comes in two variants, an 8-bit width and a 16-bit width, and has matchable addresses and an internal error correction code. This memory device is mainly used in embedded systems, medical applications, consumer electronics, and automotive applications. In terms of working principle, the S29GL512P10TFIR10 uses a stacked gate structure and floating gate transistors to read and write data. Lastly, this memory has a low power consumption, a high storage capacity, and a long life span.The specific data is subject to PDF, and the above content is for reference
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