Allicdata Part #: | S29GL512P10TFIR20D-ND |
Manufacturer Part#: |
S29GL512P10TFIR20D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P10TFIR20D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
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S29GL512P10TFIR20D is a 512 megabit (MB) boot sector Flash memory. It is based on an advanced, high performance CMOS Flash technology, and comes with a broad range of protocol features that are needed in many embedded designs.
The S29GL512P10TFIR20D has a Vcc operating voltage range of 2.7V to 3.6V and a maximum current of 10mA per bit. It is supplied in 4 Mbit, 8Mbit, 16 Mbit, 32 Mbit, 64 Mbit, 128 Mbit, 256 Mbit and 512 Mbit Density versions. The S29GL512P10TFIR20D can be used in a wide range of application sectors including automotive, medical and industrial.
The S29GL512P10TFIR20D is used in automotive ECUs, medical equipment, embedded systems and industrial devices. It also supports a variety of programming interfaces including JTAG, Serial flash programming, and direct programming. It supports dynamic memory range hardware protection and has a low power standby mode where it consumes less than 50mA.
In terms of its working principle, the S29GL512P10TFIR20D uses a single-transistor cell with high read performance. This cell enables fast random read operations at a 90MHz data rate. It has a program cache that stores data of a sector before it is written to flash. This helps improve program speed and improves writing stability. The S29GL512P10TFIR20D also supports block erase, sector erase and single bit change operations for more efficient programming.
The S29GL512P10TFIR20D also features an internal address counter and an internal data latch. The internal address counter is used to store the current address that is sent to the memory. The internal data latch is used to store the data that is written to or read from the memory. Both of these features help speed up operations by making it possible to send multiple read or write operations without having to re-send the address.
The S29GL512P10TFIR20D also supports error detection and correction, which helps to ensure that the data is correctly stored and retrieved. The chip is designed to be robust and reliable, and is designed to operate over a wide range of environmental conditions. The chip is also designed to be resistant to electrostatic discharge and radiated electromagnetic fields.
The S29GL512P10TFIR20D is a versatile, powerful and reliable memory that is well suited to a wide variety of applications. It supports a variety of programming interfaces, has an advanced architecture that is designed for high performance and reliability, and has built-in features that help to ensure that data is accurately stored and retrieved.
The specific data is subject to PDF, and the above content is for reference
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