S29GL512P11FAI012 Datasheet/PDFMemory
The S29GL512P11FAI012 is a widely used product from Cypress Semiconductor Corporation. It is based on their SuperFlash technology, which is a non-volatile memory that can perform high speed erase and write operations. This device is perfect for applications ranging from industrial and consumer devices to portable storage.
The S29GL512P11FAI012 is a multi-level cell (MLC) Flash composed of 1,216,896 bits of non-volatile memory. It can classify between four combinations of 2, 4, 8, and 16 bits of data, offering greater density and higher memory capacity. With its page program feature, the device is able to write data in time frames of 1.25 µs. It supports while the burst program feature writes 8 words of data at once.
The S29GL512P11FAI012 has a wide range of features that make it an optimal solution for applications requiring high capacity and speed. The sector protection feature makes it possible to erase and write 16,384 sectors with one operation. It provides hardware-based data protection capabilities using hardware-based logic. The device also features an Error Correcting Code (ECC), which can reduce errors in data transmission.
In terms of performance, the device can sustain reading speeds at up to 133 Mbps and writing speeds at up to 30 Mbps, with the writing speed improving by up to 33% over previous devices. Furthermore, it is built to withstand harsh temperatures and environmental influences such as humidity, shocks, and vibrations.
The S29GL512P11FAI012 can be used in a variety of applications, such as consumer products, automotive and industrial automation, medical and consumer devices, and in storage devices such as USB flash drives and SD and CF cards. It is also ideal for data intensive tasks such as streaming media and gaming, and can be used in embedded applications and system on chips (SoCs).
The working principle of the S29GL512P11FAI012 is based on the charge storing properties of floating gate transistors to provide non-volatile memory. It uses polycrystalline oxynitride (PON), which is a mature charge storage technology used in flash memory, to store data without the need of frequent refreshing.
The S29GL512P11FAI012 combines performance, robustness, and versatility, making it an ideal choice for memory applications requiring speed and reliability. With its wide range of features, it can be used in a variety of applications and is the perfect solution for companies looking for a reliable non-volatile memory solution.