Allicdata Part #: | S29GL512P11FFI020-ND |
Manufacturer Part#: |
S29GL512P11FFI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P11FFI020 Datasheet/PDF |
Quantity: | 1000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (13x11) |
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The S29GL512P11FFI020 is a type of memory that operates using a Static Random Access Memory (SRAM) technology. It is designed to provide high speed, low power operation and is suitable for a range of applications. In particular, the S29GL512P11FFI020 is capable of operating at clock speeds of up to 800 MHZ.
Memory is a core part of any electronic system, and the S29GL512P11FFI020 has several key features which make it the ideal choice for a range of systems. It is manufactured using a 0.18-micron process with a 4T architecture, which provides high performance, low power consumption and a wide operating voltage range. Additionally, the S29GL512P11FFI020 features an integrated Error Correction Code (ECC) that helps to ensure data integrity.
The S29GL512P11FFI020 is ideal for use in a wide range of applications, including automotive, industrial, medical, military and aerospace systems. In automotive systems, the memory is used for applications such as in-vehicle infotainment, driver assistance and navigation systems. Additionally, the memory is also used in industrial applications, including industrial automation, factory automation and CNC machine control.
The S29GL512P11FFI020 is constructed using a dual-bank architecture, which consists of two memory banks divided into 512 kbit each. The memory can be configured as either an 8-bit or a 16-bit device, depending on the application. It also supports burst and non-burst mode operation, and is available in multiple operating voltages, which makes it suitable for a variety of different applications.
The working principle of the S29GL512P11FFI020 is based on the same principle as other types of SRAM. When a request to store data is made, the device reads the bits of information provided, and stores it in a memory cell. Once the data is stored, the memory cell can be accessed quickly and easily, without the need to refresh or refresh the data.
The S29GL512P11FFI020 is a widely used memory device that is suitable for a range of applications. Its abundant features, low power consumption and wide operating voltage range make it an ideal choice for any system where fast, reliable and low power operation is required.
The specific data is subject to PDF, and the above content is for reference
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