Allicdata Part #: | S29GL512P11TFIV20-ND |
Manufacturer Part#: |
S29GL512P11TFIV20 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P11TFIV20 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Description
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<h2>Memory</h2><h3>S29GL512P11TFIV20 Application Field and Working Principle</h3><p>S29GL512P11TFIV20 is a kind of EEPROM, which stands for “Electrically Erasable Programmable ReadOnly Memory”. It is a non-volatile memory device, meaning data stored in its memory cells can retain their information even when power is interrupted. It has many different uses, such as storing data, programs, and parameters in computers and other electronic applications, providing a solution for an array of applications from data processing to microcontrollers.</p><p>S29GL512P11TFIV20 has a total of 512K bytes of user memory capacity and supports both 3.3V and 5V operating voltages. It has a total write cycle of 1000 and data retention is greater than 40 years. It is suitable for both industrial and automotive applications. It offers a range of options, such as block lock and unlock functions and program/erase suspend for higher performance.</p><p>The working principle of the S29GL512P11TFIV20 is based on the concept of single-transistor memory cells. Each memory cell consists of two gates. The first gate, which is known as the control gate, stores the data while the second gate, which is known as the bit line, is used to read and write the data. The control gate is connected to an input and an output. When a voltage is applied to the input line, the control gate opens and current flows through the bit line, creating a storage voltage.</p><p>When data needs to be written or erased, the control gate is opened or closed by applying a voltage to it. Writing and erasing happen within milliseconds, allowing for fast read and write functions. Additionally, once data is written, it can be protected by block locking, which prevents accidental erasure or modification of the stored data. The S29GL512P11TFIV20 also offers on-chip error correction code (ECC) which can detect and correct a single bit error.</p><p>S29GL512P11TFIV20 is widely used in many devices, ranging from simple consumer electronics to industrial and automotive applications. It is particularly suitable for applications that require reliable data storage, such as smart cards and telematics. Moreover, its low-power and fast operations make it a great choice for applications that require high data integrity and frequent write/erase cycles.</p><p>In summary, S29GL512P11TFIV20 is a versatile and reliable nonvolatile memory solution for a variety of applications. It has a good combination of fast access time, low-power performance, and reliable data storage, along with a range of features to meet the demands of target applications.</p>The specific data is subject to PDF, and the above content is for reference
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