S29GL512P12TFIV10

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Memory

The S29GL512P12TFIV10 is a high-capacity, low-power static random access memory (SRAM). It belongs to the SRAM family and serves as sophisticated memories which are used in embedded systems to store data. This device features a 532,832,160 bits of memory with 4,096bytes for each row. It also offers a low-power operation with 12.5ns access time, 1.8V to 3.6V operating voltage and 1.8V standby voltage.

It has an industry-standard 268 pin TSOP-I package type, with a 9.3mm maximum height. The device also has a wide temperature range from -40 degree Celsius to +85 degree Celsius and an extended industrial temperature range of -40 degree Celsius to +125 degree Celsius. The package also consists of eight 64Mbit and two 8Mbit arrays, four deviceID and interface address pins, and outputs of 4 output enable (OE) pins.

The S29GL512P12TFIV10 has a wide range of applications. It can be used in Automotive, Industrial, Telecommunications, and Consumer applications. Additionally, it has a wide range of applications in End Equipment such as Portable and Portable Appliances. In addition, its features also provide it an edge over other type of memory solutions such as DRAMs, NAND Flash, and so forth.

The working principle of the S29GL512P12TFIV10 is based on the concept of static random access memory. It consists of 8 columns and 512 rows of memory cells arranged in a rectangular array. Each memory cell is composed of a memory transistor and a capacitor for storing information. In addition, each row provides eight enable pins, which can be used to write, read, and erase the data stored in the memory cells.

When power is applied to the device, data is stored in the memory cells of the SRAM. The access time of the S29GL512P12TFIV10 is 12.5ns, which is much faster than other types of memory solutions. In addition, the device is made using a high-density process which allows it to save on power consumption. The low power consumption of the device makes it suitable for long-term operations.

The features of the S29GL512P12TFIV10 such as low-power operation, high-density process, and extended temperature range points to its wide-ranging utility for automotive, industrial, telecommunications, and consumer applications. Its impressive access time of 12.5ns is also advantageous for rapid context switching and small data transfers. The S29GL512P12TFIV10 thus provides an ideal memory solution for applications requiring reliable operation throughout wide temperature range and extended voltage specifications. More importantly, the S29GL512P12TFIV10 will enable systems to perform with improved efficiency, faster speeds, and greater reliability.

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