S29GL512T13DHNV10

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The S29GL512T13DHNV10 is a high-performance 512-Mbit (64 megabyte) Flash memory used in many industrial and automotive applications. It is a non-volatile memory that requires no additional power to retain data. The S29GL512T13DHNV10 can operate in multiple APIs, including an asynchronous mode and a burst mode. It offers several key features, including write protection, multiple algorithm coding, and flexibility to adjust the number of bits in a write command. The chip is capable of up to 166 MHz burst speeds with a maximum random access time of 25 nanoseconds.

This multi-level cell (MLC) Flash memory is ideal for use in industrial and automotive control applications because it offers reliable data storage over the entire temperature range of -40°C to +125°C. It is also well-suited to applications in power plants, railway systems, and medical equipment. The S29GL512T13DHNV10 is designed for use in applications where read/write time is critical and many write cycles are required.

The operations of S29GL512T13DHNV10 are based on Multiplane operations. This enables the chip to read, erase and program multiple planes simultaneously. The technology also helps achieve a fast read and write speed. Flash memory is suited for applications that need a large amount of data storage with minimum power consumption, because it does not require a refresh operation that is typically associated with DRAM. S29GL512T13DHNV10 utilizes non-volatile Flash memory cells which retain data even if power is removed.

To protect against accidental overwrite of important data, the S29GL512T13DHNV10 includes write protection features, multiple algorithm coding, and flexibility to adjust the number of bits in each write command. The write protection features enable the user to protect one or more blocks of memory. The multiple algorithm codes enable the chip to identify and isolate bad blocks, preventing the user from writing to the wrong memory location. The flexibility to adjust the number of bits in each write command ensures that data can be written and retained accurately.

In addition to its write protection features, the S29GL512T13DHNV10 provides industry-leading power consumption and performance characteristics. It offers power-saving features such as burst mode, low standby current and write protection. Its power-saving features reduce the overall power consumption of the system, allowing for prolonged operation on batteries.

The S29GL512T13DHNV10 is a highly reliable and cost effective choice for non-volatile, high-performance Flash memory. It enables significant improvements in system speed, memory capacity, and power consumption. Thanks to its powerful features, this Flash memory is well-suited to many industrial and automotive applications, where reliable operation over an extended temperature range and low power consumption are critical.

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