SCH1337-TL-W Allicdata Electronics
Allicdata Part #:

SCH1337-TL-WOSTR-ND

Manufacturer Part#:

SCH1337-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 2A SOT563
More Detail: P-Channel 30V 2A (Ta) 800mW (Ta) Surface Mount SOT...
DataSheet: SCH1337-TL-W datasheetSCH1337-TL-W Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
FET Feature: --
Power Dissipation (Max): 800mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563/SCH6
Package / Case: SOT-563, SOT-666
Description

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The SCH1337-TL-W is a single complementary MOSFET chip from Sanyo that is widely used in fast switching circuits due to its high speed and low on-resistance characteristics. This MOSFET is comprised of two N-channel MOSFETs connected in series, one for providing sink current and the other for providing source current. It offers superior power switching characteristics, with a typical on-resistance of only 0.33Ω and very low quiescent current. It also provides good protection during over-voltage conditions.

Application Field

The SCH1337-TL-W has a wide range of applications, including power management in industrial, automotive and consumer electronics, as well as telecommunications and data processing equipment. It can be used as a switch or a relay, or as a voltage-level translator. It can also be used in switching semiconductor laser drivers, low-noise voltage regulators, battery chargers and high-efficiency dc-to-dc converters.

Working Principle

The working principle of the SCH1337-TL-W is based on the principle of a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. The gate of the MOSFET is a special type of capacitor that is connected between the source and drain of the device. The gate can be controlled by applying a voltage to it, which will cause it to channel "holes" from the source to the drain. These "holes" are then used to carry the electrical current. The lower the voltage applied to the gate, the lower the conductivity and the lower the voltage drop between the source and the drain.

The high on-resistance of the SCH1337-TL-W is due to its use of N-channel MOSFETs, which are more efficient in power switching applications. It has superior protection against over-voltage, which is provided by its zener diode protection circuit. This protection circuit helps ensure that the gate voltage of the MOSFETs does not exceed its threshold voltage, thus preventing any malfunction of the device. It also offers very low quiescent current, which helps to reduce switching losses.

The SCH1337-TL-W is an ideal choice for high-speed switching applications, due to its low on-resistance and superior protection against over-voltage. It can be used as a power switch, voltage-level translator, or as a switch or a relay. It is an efficient and cost-effective solution for a wide range of circuit applications.

The specific data is subject to PDF, and the above content is for reference

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