SCH1434-TL-H

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The SCH1434-TL-H is a single N-channel enhancement mode Power MOSFET. It is produced using high cell density trench gate fabrication process which is specially designed for low on-resistance (RDS_on). It is an ideal solution for DC-DC converter application in sever and data centre.

Overview

The SCH1434-TL-H is a N Channel Enhancement mode Power MOSFET which is based on STMicroelectronics’s vertical DMOS technology to provide designers with outstanding performance and high power density. It is designed to be operated in a wide range of operating voltages, as well as its controlled gate threshold voltage making it more suitable for low-voltage application.

The device also supports a wide range of external conditions such as high junction temperature beyond 150°C with a derating factor of 0.7W/°C. Its STripFET™ technology provides an innovative low on-resistance structure, allowing the device to offer the best performance & compact solution when it comes to the realization of DC-DC converters in servers and data centres.

Features & Benefits

• Extremely Low RDS_on & total gate charge (Q_g)
• High-power density
• Low input capacitance (C_iss)
• Controlled gate threshold voltage
• Available in a wide range of package

Applications

• DC-DC converters in servers and data centres
• High-efficiency DC-DC conversion
• Battery-operated portable applications
• Switching mode power supplies
• Voltage regulator modules

Working Principle

The SCH1434-TL-H is a N-channel Enhancement Mode Power MOSFET. This type of transistor is a voltage-controlled device and it works through the use of an electric field between its gate and the body. When a negative voltage is applied to the gate, it creates an electric field that attracts electrons from the n-type semiconductor into the gate region, forming a potential barrier between the p-type and n-type semiconductors. This, in turn, blocks further current flow through the device and the result is an activated MOSFET.

The size of the electric field created by the negative gate voltage is proportional to the magnitude of the voltage applied; the higher the voltage, the larger the electric field. This relationship along with the threshold voltage of the device (the voltage at which the device starts to conduct current) allows for precise control of the current through the device.

The SCH1434-TL-H has a low threshold voltage, making it ideal for low-voltage applications such as DC-DC converters in servers and data centres. The device is further enhanced by a low on-resistance due to its STripFET™ technology, which combines low resistance with high power density.

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