SFT1431-TL-W Allicdata Electronics
Allicdata Part #:

SFT1431-TL-W-ND

Manufacturer Part#:

SFT1431-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 35V 11A TP-FA
More Detail: N-Channel 35V 11A (Ta) 1W (Ta), 15W (Tc) Surface M...
DataSheet: SFT1431-TL-W datasheetSFT1431-TL-W Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
FET Feature: --
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK/TP-FA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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SFT1431-TL-W is a high performance dual N-channel enhancement-mode MOSFET (metal-oxide-semiconductor field effect transistor) that is designed to provide very low supply current and extremely low gate charge. This MOSFET uses an optimized trench gate structure to provide excellent RDS(ON) performance while exhibiting very low gate charge. The innovative design makes it ideal for applications that require very low switching losses and fast switching speeds.

The SFT1431-TL-W dual N-channel MOSFET can be used for a variety of applications, including for use in a wide range of power management systems, audio amplifiers, industrial automation systems, motor control, HVAC systems, automotive applications, and solar photovoltaic systems. It is also used in various fields such as communications, switching, and embedded control.

The working principle of the SFT1431-TL-W MOSFET is based on field-effect action. The gate of the MOSFET is insulated by an oxide layer, which creates an electric field between the gate and the source. When a voltage is applied to the gate, the electric field varies, which modulates the conductivity of the drain-source region. As this region is modulated, it allows electrons to flow more freely, which amplifies the output signal of the transistor. The design of the metal-oxide semiconductor layer and the use of a special high-speed switching technology has resulted in increased switching speeds, helping to ensure very fast switching speeds.

The SFT1431-TL-W MOSFET is designed for low voltage and low current switching. Its drain-source voltage is up to 20V, and its source-drain current is up to 80A. It has a maximum operating temperature of 175 °C and is RoHS compliant. It has a low channel-to-channel switching time of 350nS, which allows for greatly reduced power losses and improved system performance. This MOSFET also features a low gate resistance of less than 10Ω, which further reduces switching losses and improves overall efficiency.

In summary, the SFT1431-TL-W is a high performance MOSFET designed for low voltage, low current, and fast switching applications. Its innovative design provides maximum efficiency and low switching losses, while also providing high speed switching performance. This MOSFET is ideal for use in a wide range of power management, audio, industrial automation, motor control, HVAC, automotive, and solar photovoltaic systems.

The specific data is subject to PDF, and the above content is for reference

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