Allicdata Part #: | SFT1458-H-ND |
Manufacturer Part#: |
SFT1458-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 1A IPAK |
More Detail: | N-Channel 600V 1A (Ta) 1W (Ta), 38W (Tc) Through H... |
DataSheet: | SFT1458-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK/TP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 65pF @ 20V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SFT1458-H is a voltage-controlled field-effect transistor (FET) made using a double-diffused metal-oxide semiconductor (DMOS) technology. It is used for a wide range of applications and is a popular choice for various applications.
The SFT1458-H is a single, N-channel enhancement mode FET. It has an extended drain current rating of 5.5 A in a TO-220 package and a maximum drain-source voltage of 28 V. It is designed for high temperature operating conditions, with a maximum junction temperature of 175°C. The SFT1458-H is designed for use in low voltage applications, up to 7 V, and has a very low on-resistance of 0.13 ohms.
The SFT1458-H FET is used in a variety of applications due to its high drain current ratings, low on-resistance and ease of use. It is commonly used in power and audio amplifier circuits, switching power supplies, battery charging, motor control circuits, and switch mode DC converters, among others. It can also be used in high-speed switching applications, due to its fast switching speeds of up to 1.2 μs.
The working principle of the SFT1458-H FET is based on the basic properties of a field-effect transistor. It is composed of a gate, drain, and source, which are connected together. Each of these components is responsible for controlling the current flow. When a voltage is applied to the gate, it creates an electric field between the drain and source. This electric field is capable of attracting electrons from the source to the drain, thus creating a current.
The SFT1458-H FET can be switched on and off through its gate. When a positive signal is applied to the gate, the electrons are attracted from source to the drain, and the FET turns ON. When a negative signal is applied to the gate, the electrons are repelled away from the drain and the FET turns off. This makes the SFT1458-H FET ideal for switching applications.
The SFT1458-H FET is a versatile component and is well suited for a wide range of applications. It has a wide operating range, a high drain current rating, and a low on-resistance. It is also fast switching, making it suitable for high speed applications. Thus, the SFT1458-H FET is an ideal choice for various switching and power applications.
The specific data is subject to PDF, and the above content is for reference
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