SI4618DY-T1-GE3

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The SI4618DY-T1-GE3 transistors array is a power FET array which consists of 2 power field effect transistors in a single package. It is designed to provide optimal performance in a wide range of applications such as high voltage power supplies and protection circuits. This high current transistors array also provides excellent tracking, low on-resistance, and low gate charge.

The SI4618DY-T1-GE3 is a very efficient device with reduced power dissipation, making it the perfect choice for applications that require the utmost efficiency and performance. It’s unique structure allows for easy assembly and use, providing a cost-effective solution for power electronics circuit designs. The device can handle up to a maximum drain-source voltage of 500V and its maximum drain current of 46A, as well as its maximum power dissipation of 60W., make it an ideal solution for high-power applications.

The SI4618DY-T1-GE3 is also a very reliable device, with superior robustness, resulting in improved reliability over the lifetime of the device. Its design also results in a low thermally-induced stress on the device, reducing its susceptibility to premature device degradation. It has been designed to withstand tough operating conditions on the application circuit, making it the perfect choice for applications with stringent reliability requirements.

The device has a source-drain breakdown voltage of 500V, making it an effective solution for applications operating with higher voltages, while its extremely low on-state resistance makes it ideal for power switches that require high current carrying capability and low on-state losses. The extremely low gate capacitance allows for fast operation on time critical applications, and its high voltage drain-to-source operation makes it perfect for high voltage power supplies.

The working principle of the SI4618DY-T1-GE3 transistors array is based on the use of field effect transistors. The device is built from a FET array, in which a pair of power FET transistors share the same gate connection. This connection allows for the efficient operation of both transistors together, as any current flow through the one will be induced in the other. The FETs work by controlling the current flow across their termination, providing an efficient on/off switch.

The SI4618DY-T1-GE3 transistors array is designed for use in many applications, including high voltage power supplies, protection circuits, and any other system that requires the efficient control of current. It’s improved properties provide superior performance and reliability, resulting in improved system performance. Its design and structure make it an efficient and cost-effective solution for power electronics circuit designs.

The SI4618DY-T1-GE3 transistors array is an excellent choice for applications that require the utmost efficiency and reliability. Its unique design makes it the perfect choice for power switches, protection circuits, and other applications that require the precise control of current. Its extreme efficiency and improved robustness make it an excellent choice for applications that require superior performance and reliability.

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