SI4654DY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A SI4654DY-T1-E3 is a type of field-effect transistor (FET) that has a single gate that controls the current flow between its source and drain terminals. It is a type of MOSFET (metal-oxide-semiconductor FET) and is commonly used for low-voltage and low-power applications. The SI4654DY-T1-E3 is a vertical double-diffused metal-oxide-semiconductor (DMOS) FET.

The FET\'s gate voltage controls the amount of current flowing between the source and drain, making it an essential part of many digital and analog circuits. By modifying the gate voltage, the device can be used to amplify or switch electrical signals. FETs are often used as digital logic gates because they can quickly turn on and off with relatively low power.

The structure of an SI4654DY-T1-E3 is composed of a MOS capacitator, which is composed of two n-channel partially-depleted layers of silicon (the source and drain) and a gate electrode. As the voltage at the gate electrode is increased, a channel is formed below the gate and carriers (electrons and holes) are allowed to flow from the source to the drain. This causes a current to flow.

One of the main advantages of using a FET over a bipolar junction transistor (BJT) is that it requires less input power. FETs are also more reliable than BJTs, as they are not prone to device failure due to thermal runaway. Another advantage of FETs is that they can handle higher voltages and currents, making them suitable for higher-power applications.

The SI4654DY-T1-E3 is a vertical DMOS FET suitable for applications such as DC/DC converters, power management circuits, and low voltage DC/AC inverters. It is also suitable for portable electronic devices due to its low power consumption. The device has a drain-source breakdown voltage of 120V, and a maximum drain-source resistance of 0.036ohms. It is rated for a maximum drain current of 10A at 25°C and a maximum VGS of 5V.

In summary, the SI4654DY-T1-E3 is a vertical DMOS FET suitable for applications that require low-voltage and low-power control. It is a reliable and power-efficient device, and can be used for both analog and digital circuits. With its high breakdown voltage, low drain-source resistance, and maximum drain current rating, the device is suitable for power management circuits, DC/DC converters, and low-voltage DC/AC inverters.

The specific data is subject to PDF, and the above content is for reference