Allicdata Part #: | SI4646DY-T1-GE3-ND |
Manufacturer Part#: |
SI4646DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A 8SOIC |
More Detail: | N-Channel 30V 12A (Tc) 3W (Ta), 6.25W (Tc) Surface... |
DataSheet: | SI4646DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1790pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | SkyFET®, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4646DY-T1-GE3 is a single-channel N-Channel Enhancement Mode Field-Effect Transistor (FET) which is designed to be used in power switch applications. This transistor is an extremely useful device for creating low-side switches that are used in many digital circuits. This transistor has very low on-resistance and is typically used for fast switching applications in order to minimize power dissipation in a circuit.
The SI4646DY-T1-GE3 is rated at a maximum voltage of 30V and is capable of delivering a drain current of up to 5A. This makes it ideally suited for switching power loads with low on-resistance requirements. The SI4646DY-T1-GE3 also has a low on-resistance of 0.15-0.2 Ohms, making it efficient and capable of handling higher currents.
The working principle of the SI4646DY-T1-GE3 is based on a field-effect gate and the pin configuration of the device. When a voltage is applied to the gate terminal of the transistor, it forms an electrostatic field which acts on the drain and source terminals of the transistor. This electrostatic field creates a conductive path between the drain and source, allowing current to flow when a voltage is applied.
The SI4646DY-T1-GE3 is typically used in power switch applications, such as LED drivers, DC-DC converters, and low-side switches. In LED drivers, the transistor can be used to switch current to an LED to control its brightness. This can be done by applying a voltage to the gate terminal, creating an electrostatic field which will allow current to flow from the source to the drain.
The SI4646DY-T1-GE3 can also be used as a low-side switch in a variety of circuits. In these circuits, a voltage applied to the gate terminal will create an electrostatic field which will allow current to flow from the source to the drain. This can be useful in controlling the current in a certain part of a circuit, or in providing a switch which can be remotely controlled.
The SI4646DY-T1-GE3 is also useful in DC-DC converters. In these converters, the transistor can be used to switch the output current in order to control the output voltage of the converter. This transistor is especially useful in these applications because it has a very low on-resistance, allowing for a higher current to be switched with minimal power dissipation.
In summary, the SI4646DY-T1-GE3 is a single-channel N-Channel Enhancement Mode Field-Effect Transistor that is ideally suited for power switch applications. It has a low on-resistance of 0.15-0.2 Ohms, a maximum voltage rating of 30V, and can deliver drain currents of up to 5A. This makes it an excellent choice for applications such as LED drivers, DC-DC converters, and low-side switches.
The specific data is subject to PDF, and the above content is for reference
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