SI4642DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4642DY-T1-E3TR-ND

Manufacturer Part#:

SI4642DY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 34A 8-SOIC
More Detail: N-Channel 30V 34A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac...
DataSheet: SI4642DY-T1-E3 datasheetSI4642DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI4642DY-T1-E3 is a type of transistor or field effect transistor (FET) that is in the family of MOSFETs (metal oxide semiconductor field effect transistors). This type of FET is a single transistor that is often used in switching applications due to its low on-state resistance and its ability to switch quickly.

The SI4642DY-T1-E3 is commonly used in applications that require low on-state resistance such as power supplies and load switches. It’s also used in applications that require a fast switching speed such as smart phones and data communication circuits.

The SI4642DY-T1-E3 operates as a three-terminal device with the source, drain, and gate terminals. This FET is an enhancement-mode device and its gate voltage must be higher than its source voltage to turn it on.

The source voltage creates a channel between the source and drain and the channel becomes resistance-free when the voltage applied to the gate terminal exceeds the threshold voltage of the device. This in turn allows current to flow from the source to the drain.

A unique feature of the SI4642DY-T1-E3 is its fast switching speed. The device is able to respond quickly to changes in the gate voltage and can switch from an on-state to an off-state in a matter of nanoseconds. This makes the SI4642DY-T1-E3 an ideal choice for power and load switching applications.

The SI4642DY-T1-E3 is also capable of driving large loads such as motors and high-voltage power supplies due to its low on-state resistance. This makes it ideal for controlling high current applications such as motors and appliances.

The SI4642DY-T1-E3 is also designed with prevention against latch-up and over-voltage. This means that the device is protected against voltage spikes and other voltage-related problems that could damage or destroy the device.

Overall, the SI4642DY-T1-E3 is an ideal choice for applications that require a low on-state resistance, fast switching speed, and protection from latch-up and over-voltages. It is commonly used in power supplies, load switches, and data communication circuits.

The specific data is subject to PDF, and the above content is for reference

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