Allicdata Part #: | SI4642DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4642DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 34A 8-SOIC |
More Detail: | N-Channel 30V 34A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac... |
DataSheet: | SI4642DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 7.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5540pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.75 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4642DY-T1-E3 is a type of transistor or field effect transistor (FET) that is in the family of MOSFETs (metal oxide semiconductor field effect transistors). This type of FET is a single transistor that is often used in switching applications due to its low on-state resistance and its ability to switch quickly.
The SI4642DY-T1-E3 is commonly used in applications that require low on-state resistance such as power supplies and load switches. It’s also used in applications that require a fast switching speed such as smart phones and data communication circuits.
The SI4642DY-T1-E3 operates as a three-terminal device with the source, drain, and gate terminals. This FET is an enhancement-mode device and its gate voltage must be higher than its source voltage to turn it on.
The source voltage creates a channel between the source and drain and the channel becomes resistance-free when the voltage applied to the gate terminal exceeds the threshold voltage of the device. This in turn allows current to flow from the source to the drain.
A unique feature of the SI4642DY-T1-E3 is its fast switching speed. The device is able to respond quickly to changes in the gate voltage and can switch from an on-state to an off-state in a matter of nanoseconds. This makes the SI4642DY-T1-E3 an ideal choice for power and load switching applications.
The SI4642DY-T1-E3 is also capable of driving large loads such as motors and high-voltage power supplies due to its low on-state resistance. This makes it ideal for controlling high current applications such as motors and appliances.
The SI4642DY-T1-E3 is also designed with prevention against latch-up and over-voltage. This means that the device is protected against voltage spikes and other voltage-related problems that could damage or destroy the device.
Overall, the SI4642DY-T1-E3 is an ideal choice for applications that require a low on-state resistance, fast switching speed, and protection from latch-up and over-voltages. It is commonly used in power supplies, load switches, and data communication circuits.
The specific data is subject to PDF, and the above content is for reference
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