Allicdata Part #: | SI4628DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4628DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 38A 8SOIC |
More Detail: | N-Channel 30V 38A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac... |
DataSheet: | SI4628DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 7.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3450pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
Series: | SkyFET®, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4628DY-T1-GE3 is a single P-Channel Enhancement Mode Power MOSFET, designed for use in a wide range of applications such as power management, battery protection, power switching, DC-DC converter, audio amplifiers and many more. It is designed to provide the best in class performance and reliability. The SI4628DY-T1-GE3 is manufactured using a high-voltage, low-noise, low-Rds on, advanced doping process.
The SI4628DY-T1-GE3 MOSFET combines high power performance and excellent on-off control due to its low on-resistance and high input gate threshold voltage. It also has an outstanding body diode, making it suitable for high current, power switch applications. The device is housed in a fully shielded, thermally and mechanically reinforced double sided, TSOT-23 package, providing superior temperature and RF performance.
Working Principle
The working principle of the SI4628DY-T1-GE3 MOSFET is based on the MOSFET technology. It is a field-effect transistor that uses an electric field to control the conductivity of a semiconductor material. The MOSFET works like a switch, allowing current to flow through the transistor when a gate voltage is applied. When the gate voltage is removed, the transistor is turned off and the current is blocked.
The SI4628DY-T1-GE3 is a power MOSFET and is designed to switch higher voltages and currents than a standard MOSFET. It is biased in the enhancement mode, which means the transistor starts in the “off” condition and needs an input voltage to turn “on”. The drain-source resistance is typically less than 2 Ω, allowing it to handle high currents while maintaining low voltage drops. The device also features low input capacitance, making it suitable for high frequency switching applications.
Application Field
The SI4628DY-T1-GE3 MOSFET is suitable for a wide range of applications such as power management, battery protection, power switching, DC-DC converter, audio amplifiers and many more. It is an ideal choice for general purpose electronic applications, offering exceptional performance and reliability.
The device is especially suited for use in note books, TV sets, LCD monitors, industrial electronics and automotive applications. It can also be used in a wide range of applications such as switches and motors, high voltage switching circuits, motor protection, small-signal amplifiers, gate drivers, load switch applications and other control systems. The SI4628DY-T1-GE3 is also used in HVAC, motor controllers, switch mode power supplies and telecom applications.
In summary, the SI4628DY-T1-GE3 MOSFET is a low cost, highly efficient solution for power management, battery protection, power switching, DC-DC converter, audio amplifiers and many other applications. It offers outstanding performance, reliability, and energy efficiency. With its low on-resistance, high input gate threshold voltage, and excellent body diode, this device is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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