SI4688DY-T1-E3

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The SI4688DY-T1-E3 is an N-Channel Enhancement Mode Field Effect Transistor (FET) designed on a high-voltage silicon carbon substrate. It is used in many applications that require a high-voltage, low-current FET such as an audio power amplifier, RF power amplifier and switching power supplies.

The SI4688DY-T1-E3 is manufactured in several packages including a TO package, a DG-3 package and a TO-220 package. Each package has different electrical characteristics and performance that are suitable for different applications. The SI4688DY-T1-E3 is made from high-voltage silicon-carbide which provides great power dissipation and enhanced electrical performance for high voltage applications.

The SI4688DY-T1-E3 is a single-channel N-Channel Enhancement Mode Field Effect Transistor that uses a positive(+) gate voltage to switch on and off current. It is typically used as an audio power amplifier to amplify sound signals from an audio source. The device has a high drain-source cutoff frequency of 5.5 GHz that allows it to operate at high frequency, so it can be used in applications such as RF power amplifiers and in radio frequency circuits.

The SI4688DY-T1-E3 has a low on-state resistance of 20 milli-ohms which allows it to draw a much higher current than other N-channel FETs. This makes it suitable for applications such as switching power supplies, audio amplifiers and RF power amplifiers. It also has a high drain-source breakdown voltage of 75V which makes it suitable for high voltage applications.

The SI4688DY-T1-E3 has a high output capacitance of 2.9pF which makes it suitable for use in switching applications. The low output capacitance of the device allows it to switch on and off quickly, which makes it suitable for use in high-frequency switching applications. It also has a high gate-source breakdown voltage of 16V which makes it resistant to voltage spikes and other electrical transients.

The SI4688DY-T1-E3 is typically used in audio power amplifiers, RF power amplifiers and switching power supplies. It is a high performance N-Channel FET that provides superior electrical performance and reliability. It is also suitable for use in high voltage applications due to its high drain-source breakdown voltage. The device is available in a wide range of packages and is suitable for many industrial, consumer and automotive applications.

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