SI4688DY-T1-GE3

Introduction

The SI4688DY-T1-GE3 is a single-channel enhancement-mode (normally-off) vertical N-channel Power MOSFET, manufactured using the high cell density, one-touch-gate silicon gate CMOS process. It is designed for power switching and amplifier applications. This device has an excellent gate charge, low RDS(on) and exceptional performance in avalanche/dv/dt applications.

Application Field

The SI4688DY-T1-GE3 provides superior switching performance for both commercial and industrial-grade applications. Typical uses include motor control, general purpose MOSFETs, DC-DC converters, power supplies, and power switching circuits. It is ideal for applications where high frequency operation is required, such as DC-DC converters, switch mode power supplies, and other power switching circuits.

Working Principle

The working principle of the device is based on the physical behavior of N-type MOSFETs (Metal Oxide Semiconductor Field-effect Transistors). Essentially, a vertical N-channel MOSFET is an insulated gate connected to an N-type semiconductor material. When a positive voltage is applied to the gate of the MOSFET, an electric field is established through the insulated gate, causing holes to be emitted from the N-type semiconductor material into the gate, creating a conductive channel. The conductive channel links the source and drain of the MOSFET, allowing current to flow.

Conclusion

The SI4688DY-T1-GE3 is a single-channel enhancement-mode vertical N-channel MOSFET. It is designed for commercial and industrial applications, such as motor control, DC-DC converters, power supplies and power switching circuits. The working principle of the device is based on the physical behavior of N-type MOSFETs and the formation of a conductive channel across the source and drain upon application of a positive voltage to the gate.