Allicdata Part #: | SI4618DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4618DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 8A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 8A, 15.... |
DataSheet: | SI4618DY-T1-E3 Datasheet/PDF |
Quantity: | 7500 |
Specifications
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | SI4618 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.98W, 4.16W |
Input Capacitance (Ciss) (Max) @ Vds: | 1535pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A, 15.2A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Half Bridge) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SI4618DY-T1-E3 is a dual N/P-channel enhancement mode vertical structure metal-oxidesemiconductor field effect transistor (MOSFET). It is a versatile device widely used for voltagecontrolled switching and load driving operations in several commercial and industrial applicationfields. This article provides an insight into the application fields and working principle ofSI4618DY-T1-E3 transistor.Application fields of SI4618DY-T1-E3:Load Switching and Driving ApplicationsThe SI4618DY-T1-E3 can be used to drive high capacitive and inductive loads. It is suitable forhigh voltage applications wherein the power handling capability of the device is much higherthan that of other MOSFETs. They are extensively used in switching power supplies and privatedistribution networks.Power Conversion ApplicationsThese transistors are also extensively used in power conversion applications such as solar powerconverters, DC-DC converters, and power transmission lines. The device has a high thresholdvoltage, which enables it to withstand large voltage fluctuations during power transfer, thusimproving its overall efficiency.Protection ApplicationsThe SI4618DY-T1-E3 is often used for protection applications wherein it is used for load andmotor protection to guard against short circuits. The device aids in controlling the flow of currentwithout creating any arcing or sparks.Automotive ApplicationsThe SI4618DY-T1-E3 transistors are extensively used in automotive applications, where they areused to control the flow of current in the powertrain, fuel injection system, and other automotiveelectrical systems.Working PrincipleThe SI4618DY-T1-E3 transistor is a vertical structure MOSFET. This transistor consists of gate andsource terminals which are separated by a thin layer of gate oxide. The gate voltage is appliedacross the gate and source terminals, which in turn modulates the width of the channel formedbetween the source and drain according to the applied gate voltage. The channel widths isresponsible for allowing current flow from the source to the drain.When the gate voltage is higher than that of the source voltage, the channel becomes wider,allowing more current flow from the source to the drain. Conversely, a lower gate voltage causesa decrease in the channel width and reduces the current flow from the source to the drain. This isknown as the enhancement mode of operation, wherein the flow of current is controlled by alteringthe width of the channel, which is in turn controlled by the gate voltage. The voltage controlled operation of this device enables it to be used in devices like powerconverters, switching power supplies, motors, fuel injection system, and other application fields.Additionally, the SI4618DY-T1-E3 has a low on-state resistance (R DS-on). This feature makes thedevice more efficient, as the R DS-on value determines the amount of current flowing through thechannel. This reduces the power dissipation of the device, thus reducing the amount of heatgenerated by the device and improving its overall efficiency. It also helps in controlling the flowof current effectively, thus improving the overall performance of the device.Overall, the SI4618DY-T1-E3 is a versatile device which is used in numerous applications forcontrolling the flow of current. Its high power handling capability and low RDS-on value makeit highly efficient in controlling the current in various applications. The device can be used inseveral industrial and commercial application fields, like solar power converters, powerconversion, protection, and automotive applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "SI46" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4660DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 23.1A 8-S... |
SI4688DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 8.9A 8-SO... |
SI4654DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 28.6A 8-S... |
SI4636DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 17A 8SOIC... |
SI4646DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 8SOIC... |
SI4646DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 8SOIC... |
SI4654DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 28.6A 8-S... |
SI4660DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 23.1A 8-S... |
SI4682DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
SI4682DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
SI4684DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
SI4684DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
SI4688DY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 8.9A 8-SO... |
SI4621DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 6.2A 8-SO... |
SI4642DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 34A 8-SOI... |
SI4630DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 40A 8-SOI... |
SI4628DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 38A 8SOIC... |
SI4670DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 25V 8A 8-SOI... |
SI4618DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8SOMo... |
SI4686DY-T1-E3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 30V 18.2A 8-S... |
SI4686DY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 30V 18.2A 8-S... |
SI4622DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4650DY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4620DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 6A 8-SOIC... |
SI4620DY-T1-GE3 | Vishay Silic... | 0.23 $ | 1000 | MOSFET N-CH 30V 6A 8-SOIC... |
SI4622DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4668DY-T1-E3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET N-CH 25V 16.2A 8-S... |
SI4668DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 16.2A 8-S... |
SI4638DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 22.4A 8SO... |
SI4618DY-T1-E3 | Vishay Silic... | -- | 7500 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4670DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 25V 8A 8SOIC... |
SI4630DY-T1-E3 | Vishay Silic... | -- | 10000 | MOSFET N-CH 25V 40A 8-SOI... |
SI4666DY-T1-GE3 | Vishay Silic... | -- | 7500 | MOSFET N-CH 25V 16.5A 8-S... |
SI4685-A10-GM | Silicon Labs | 9.83 $ | 416 | IC ANLG/DGTL RADIO 48QFN*... |
SI4689-A10-GM | Silicon Labs | 10.62 $ | 286 | IC ANLG/DGTL RADIO 48QFN*... |
SI4684-A10-GM | Silicon Labs | -- | 103 | IC RADIO RX ANLG/DGTL 48Q... |
SI4682-A10-GM | Silicon Labs | -- | 146 | IC RADIO RX ANLG/DGTL 48Q... |
SI4688-A10-GM | Silicon Labs | -- | 84 | IC RADIO RX ANLG/DGTL 48Q... |
SI4684-A10-GMR | Silicon Labs | -- | 1000 | IC RADIO RX ANLG/DGTL 48Q... |
SI4632-A10-GM | Silicon Labs | 10.62 $ | 1000 | IC ANLG/DGTL RADIO 48QFN*... |
Latest Products
AO4822L_101
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
SI5944DU-T1-GE3
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
SI4973DY-T1-GE3
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
NTMD6601NR2G
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
BUK7K6R2-40E/CX
MOSFET 2N-CH 56LFPAKMosfet Array
PHN210,118
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...