SI4668DY-T1-E3

Vgs(th) (Max) @ Id:	2.6V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1654pF @ 15V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	10.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16.2A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI4668DY-T1-E3 is a single, N-channel, Enhanced Low RDS(on) MOSFET transistor. This type of transistor is designed for switching applications, offering high speed and low power consumption. It is part of the SIRFET family of MOSFETs, which are characterized by their very low on-resistance and very fast switching characteristics.The SI4668DY-T1-E3 is based on the industry standard TO-252 package, and is optimized for low RDS(on). This device includes a variety of features that make it suitable for many different applications, such as power management, low voltage and high current power conversion, DC-DC converters, motor control and power switching. It also features a gate-source voltage range of -20V to +20V and a drain-source voltage range of -20V to +20V, making it highly suitable for a wide range of applications.In power management applications, the SI4668DY-T1-E3 can be used to efficiently control the current flow in circuits. The device operates at a high frequency, allowing for high switching speeds, which can be adjusted to provide efficient energy management. This makes the device well-suited for use in a variety of power management applications, such as switching converters, adjustable-speed motor control and power switching.The device is also well suited for use in DC-DC converters, due to its low on-resistance and fast switching speeds. This makes it ideal for use in high current applications, such as power adapters and laptop chargers, where fast switching speeds and low power consumption are essential. Additionally, the device can be used in low voltage and high current power conversion applications, allowing for efficient energy management and reduced power loss due to its low on-resistance characteristics.In motor control applications, the SI4668DY-T1-E3 is well-suited for use in a variety of motor control applications. The device can be used to control the speed of brushless DC motors, providing reliable and efficient performance. It is also suitable for use in adjustable speed motor control applications, due to its low on-resistance, fast switching speeds and high power handling capabilities.In general, the SI4668DY-T1-E3 is a reliable and versatile single N-channel Enhanced Low RDS(on) MOSFET transistor. It is available in the industry-standard TO-252 package, and is suitable for a variety of different applications, such as power management, low voltage and high current power conversion, DC-DC converters, motor control, and power switching. Its low on-resistance and fast switching speeds make it ideal for a range of power management and motor control applications, and its low power consumption makes it an excellent choice for efficient energy utilization.

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