Allicdata Part #: | SI4654DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4654DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 25V 28.6A 8-SOIC |
More Detail: | N-Channel 25V 28.6A (Tc) 2.5W (Ta), 5.9W (Tc) Surf... |
DataSheet: | SI4654DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5.9W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3770pF @ 15V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28.6A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4654DY-T1-GE3 is one of the most commonly used MOSFET transistors today, as it is specifically designed for use in various high-powered applications. This type of device is unique in that it is able to provide both low on-state resistance and high switching speed, making it an ideal choice for many types of electronic circuits.
The SI4654DY-T1-GE3 is a single-channel vertical double-diffused metal oxide semiconductor field-effect transistor (DMOSFET) and it is characterized by its low drive voltage, low gate to source leakage, low-capacitance drain-to-source, and high-drain current capability. It is widely used in applications such as motor control, power switching, and small signal switching.
The working principle of the SI4654DY-T1-GE3 is based on the transfer of electric charge between the source and drain terminals. When the transistor is in its off state, the positive source and negative drain terminals are separated; when a voltage is applied, a conductive path is formed between them and electricity can flow between the two. The resistance between the source and drain is determined by the width of the channel created in the transistor.
The gate voltage is then used to control the conductivity of the channel. The relationship between the gate voltage and the drain current is referred to as the transfer characteristic of the device. The gate-to-source voltage, known as the threshold voltage, must be exceeded in order for the device to start conducting. This is known as the MOSFET “turn-on” voltage.
The SI4654DY-T1-GE3 is a voltage-controlled device, meaning that the gate voltage must remain constant in order for the transistor to maintain a specific amount of current. Once the gate voltage falls below the turn-on threshold, the device is shut down and no current can flow through it. This makes the SI4654DY-T1-GE3 an ideal choice for applications that require precise control of current and voltage.
The major application of the SI4654DY-T1-GE3 is in motor control circuits. It can be used to control the speed and direction of the motor as well as provide protection from various overloading conditions. It can also be used in power supply systems as it is capable of switching large currents with fast switching speeds. Its low on-state resistance makes it suitable for use in high-frequency circuits.
The SI4654DY-T1-GE3 is also used in small-signal switching circuits due to its low-capacitance drain-to-source and high-drain current capability. It can be used to switch small signals such as logic levels and other signals from high-frequency sources. It is used in various consumer electronic products such as television receivers, CD players, camcorders, and cell phones.
The SI4654DY-T1-GE3 is a versatile and reliable device that can be used in a wide variety of applications. Its low drive voltage, high switching speed, and low on-state resistance makes it ideal for a variety of high-powered applications. Its low gate-to-source leakage ensures that it can be used safely in small-signal switching circuits, while its high-drain current capability makes it suitable for use in motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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