Allicdata Part #: | SI4660DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4660DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 25V 23.1A 8-SOIC |
More Detail: | N-Channel 25V 23.1A (Tc) 3.1W (Ta), 5.6W (Tc) Surf... |
DataSheet: | SI4660DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 23.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 5.6W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The SI4660DY-T1-GE3 is a single transistor device employed in various applications. It is categorized under the FETs and MOSFETs – Single category. This transistor can be used to perform various electrical functions such as switching, amplification, and current switching, among others. The device is composed of n-channel, epitaxial silicon planar, depletion-mode and drain-gate combined type.
The SI4660DY-T1-GE3 can be used in many applications such as, small cellular phones, tablets and notebooks, portable media players, cameras, power management circuits, and other applications where space is a constraint. It can also be used in low-noise preamplifier circuits, precision amplifiers, and pulsed loads. These applications require the switching speed and high transconductance characteristics of the device. It meets all the specifications of general electronic switching and amplification applications.
The working principle of the SI4660DY-T1-GE3 revolves around the applications it is used for. It is a n-channel, epitaxial silicon planar, depletion-mode and drain-gate combined type device. The device works by using the gate and the drain source to switch and control the flow of currents of charge carriers, or electrons from the source to the drain. This is done by using an input voltage applied to the gate of the transistor, thereby creating electric fields. This electric field then controls the current flow through the device.
The device can also be configured in order to operate as an amplifier as well. This is achieved by applying an input signal, such as a voltage, to the gate of the device. The electric fields created by this input signal amplifies the current flow between the drain and the source. This amplified current then drives the output signal of the device. This configuration of the SI4660DY-T1-GE3 is especially useful in applications where low voltage and low current levels are required.
The SI4660DY-T1-GE3 is a highly versatile device that has a variety of applications. It provides excellent performance and reliability in its applications. Its compact size and low power consumption make it ideal for a range of applications in mobile devices and embedded systems. By understanding its working principles, engineers can make the best use of the device in their various application fields.
The specific data is subject to PDF, and the above content is for reference
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