SI4660DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4660DY-T1-GE3TR-ND

Manufacturer Part#:

SI4660DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 25V 23.1A 8-SOIC
More Detail: N-Channel 25V 23.1A (Tc) 3.1W (Ta), 5.6W (Tc) Surf...
DataSheet: SI4660DY-T1-GE3 datasheetSI4660DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4660DY-T1-GE3 is a single transistor device employed in various applications. It is categorized under the FETs and MOSFETs – Single category. This transistor can be used to perform various electrical functions such as switching, amplification, and current switching, among others. The device is composed of n-channel, epitaxial silicon planar, depletion-mode and drain-gate combined type.

The SI4660DY-T1-GE3 can be used in many applications such as, small cellular phones, tablets and notebooks, portable media players, cameras, power management circuits, and other applications where space is a constraint. It can also be used in low-noise preamplifier circuits, precision amplifiers, and pulsed loads. These applications require the switching speed and high transconductance characteristics of the device. It meets all the specifications of general electronic switching and amplification applications.

The working principle of the SI4660DY-T1-GE3 revolves around the applications it is used for. It is a n-channel, epitaxial silicon planar, depletion-mode and drain-gate combined type device. The device works by using the gate and the drain source to switch and control the flow of currents of charge carriers, or electrons from the source to the drain. This is done by using an input voltage applied to the gate of the transistor, thereby creating electric fields. This electric field then controls the current flow through the device.

The device can also be configured in order to operate as an amplifier as well. This is achieved by applying an input signal, such as a voltage, to the gate of the device. The electric fields created by this input signal amplifies the current flow between the drain and the source. This amplified current then drives the output signal of the device. This configuration of the SI4660DY-T1-GE3 is especially useful in applications where low voltage and low current levels are required.

The SI4660DY-T1-GE3 is a highly versatile device that has a variety of applications. It provides excellent performance and reliability in its applications. Its compact size and low power consumption make it ideal for a range of applications in mobile devices and embedded systems. By understanding its working principles, engineers can make the best use of the device in their various application fields.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI46" Included word is 40
Part Number Manufacturer Price Quantity Description
SI4630-A10-GMR Silicon Labs 6.45 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4654DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 28.6A 8-S...
SI4684DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 16A 8-SOI...
SI4624-A10-GMR Silicon Labs 10.93 $ 1000 IC DGTL RADIO SGL CHIP 48...
SI4634-A10-GM Silicon Labs 8.53 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4629-A10-AM Silicon Labs 17.75 $ 1000 IC DGTL RADIO SGL CHIP 48...
SI4668DY-T1-E3 Vishay Silic... 0.39 $ 1000 MOSFET N-CH 25V 16.2A 8-S...
SI4684-A10-GMR Silicon Labs -- 1000 IC RADIO RX ANLG/DGTL 48Q...
SI4646DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A 8SOIC...
SI4614-A10-GM Silicon Labs 0.0 $ 1000 IC DAB/DAB+ FM AM AUTO 48...
SI4632-A10-GM Silicon Labs 10.62 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4634-A10-GMR Silicon Labs 7.25 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4685-A10-GMR Silicon Labs -- 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4686DY-T1-GE3 Vishay Silic... -- 2500 MOSFET N-CH 30V 18.2A 8-S...
SI4624-A10-AM Silicon Labs 14.78 $ 1000 IC DGTL RADIO SGL CHIP 48...
SI4688DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 8.9A 8-SO...
SI4684-A10-GDR Silicon Labs 0.0 $ 1000 IC RADIO RX ANLG/DGTL 62W...
SI4626ADY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 30A 8-SOI...
SI4613-A10-AMR Silicon Labs 11.18 $ 1000 IC DGTL HD RADIO AM/FM LP...
SI4629-A10-AMR Silicon Labs 15.42 $ 1000 IC DGTL RADIO SGL CHIP 48...
SI4642DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 34A 8-SOI...
SI4682-A10-GDR Silicon Labs 0.0 $ 1000 IC RADIO RX ANLG/DGTL 62W...
SI4618DY-T1-E3 Vishay Silic... -- 7500 MOSFET 2N-CH 30V 8A 8-SOI...
SI4688DY-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 8.9A 8-SO...
SI4688-A10-GDR Silicon Labs 0.0 $ 1000 IC RADIO RX ANLG/DGTL 62W...
SI4628DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 38A 8SOIC...
SI4683-A10-GMR Silicon Labs -- 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4624-A10-AMR Silicon Labs 12.86 $ 1000 IC DGTL RADIO SGL CHIP 48...
SI4684DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 16A 8-SOI...
SI4650DY-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET 2N-CH 30V 8A 8-SOI...
SI4620DY-T1-GE3 Vishay Silic... 0.23 $ 1000 MOSFET N-CH 30V 6A 8-SOIC...
SI4632-A10-GMR Silicon Labs 6.45 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4654DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 25V 28.6A 8-S...
SI4668DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 16.2A 8-S...
SI4689-A10-GMR Silicon Labs 6.45 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4685-A10-GM Silicon Labs 9.83 $ 416 IC ANLG/DGTL RADIO 48QFN*...
SI4634DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 24.5A 8-S...
SI4635-A10-GM Silicon Labs 8.95 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
SI4660DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 23.1A 8-S...
SI4631-A10-GMR Silicon Labs 6.78 $ 1000 IC ANLG/DGTL RADIO 48QFN*...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics