Allicdata Part #: | SI4686DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4686DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 18.2A 8-SOIC |
More Detail: | N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surfac... |
DataSheet: | SI4686DY-T1-GE3 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 5.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | TrenchFET®, WFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.2A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4686DY-T1-GE3 is a Silicon Carbide (SiC) power Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). It provides superior switching performance and improved reliability solutions for a variety of power system design requirements. This MOSFET is suitable for applications that require high current, fast switching, and wide voltage range.
The SiC MOSFET uses the latest in silicon carbide technology to provide superior performance compared to traditional silicon-based MOSFETs. It features a low on-resistance and a low gate charge, allowing it to operate more efficiently at higher voltage and current levels than traditional silicon-based MOSFETs. This makes it suitable for high-power switching and driving applications such as high-current DC-DC converters, high-frequency power supply designs, power supply conversion, and lighting control.
The Si4686DY-T1-GE3 is a fast-switching single-packaged MOSFET with an insulated gate. It offers a high degree of temperature stability and low capacitive coupling. It also features a wide range of operating voltages from 10 V - 600 V and is available in a variety of packages and sizes.
The working principle of the Si4686DY-T1-GE3 is based on the principle of the metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET is a type of transistor that is consistently used in various technologies and applications. The basic structure of the MOSFET consists of four regions in which electrical current flows. These regions are referred to as the source, drain, gate, and body regions. The working principle of the MOSFET is based on the concept of the MOS capacitor. When a voltage is applied to the gate, an electric field forms between the gate and the body which causes electrons to flow from the source to drain. This current flow can then be controlled by varying the voltage applied to the gate.
The SI4686DY-T1-GE3 is suitable for a wide range of applications such as automotive, industrial and consumer applications. It can be used in high-current motor drives and in AC/DC converters. It is also suitable for lighting control, power supply security and power supply protection applications. The Si4686DY-T1-GE3 has a variety of design advantages, such as high power density, low on-state resistance and low capacitive coupling. As a result, it offers superior system performance in applications requiring fast switching, high current and wide voltage ranges.
In conclusion, the Si4686DY-T1-GE3 power MOSFET is a high-performance device that offers superior performance compared to traditional silicon-based MOSFETs. It features a low on-resistance and a low gate charge, allowing it to operate more efficiently at higher voltage and current levels than traditional MOSFETs. This makes it suitable for a variety of power system design requirements. The Si4686DY-T1-GE3 is suitable for applications that require high current, fast switching and wide voltage ranges.
The specific data is subject to PDF, and the above content is for reference
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