SI4804BDY-T1-E3

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SI4804BDY-T1-E3 is a high-frequency, high-voltage, high-temperature, power MOSFET array that can be used in a variety of applications.

The SI4804BDY-T1-E3 is built on a monolithic high-voltage silicon chip using high performance, UJT-structure (un-junction transistor) transistors. This allows for very low levels of leakage current, excellent thermal reliability and highly efficient energy transfer characteristics.

It consists of four independent N- and P-channel power MOSFETs connected in a paralleled configuration in an integrated package. It has four separate drain terminals and five source terminals, which are suitable for use in various configurations. It has a wide range of breakdown voltage and a low threshold voltage, making it ideal for applications requiring a high voltage, high current output.

The SI4804BDY-T1-E3 can be used in applications such as power supplies, motor control, high voltage rectifiers, and switch-mode power converters. It is a highly reliable, efficient, and robust device suitable for a wide range of applications. It is capable of handling high-power reverse bias and low drain-source-on resistance when switching from OFF to ON mode.

The working principle of the SI4804BDY-T1-E3 is based on the generation of an external electric field in the channel region of the device. This field is generated by the voltage applied to the gate terminal and is responsible for controlling the source-drain current flow. When the gate voltage is below the channel threshold voltage, no current will flow from the drain to the source. When the gate voltage is above the threshold voltage, the electric field in the channel increases and a current can then flow from the drain to the source.

In addition, the SI4804BDY-T1-E3 is protected against reverse breakdown voltages, over-temperature operation and high ESD protection. Its robust package ensures reliable operation in an industrial environment. Its small package size makes it an ideal choice for portable and low-power systems.

The SI4804BDY-T1-E3 is a highly reliable, efficient, and robust power MOSFET array that can be used in a variety of applications. It has a wide range of breakdown voltage and a low threshold voltage, making it ideal for applications requiring a high voltage, high current output. Its robust package ensures reliable operation in an industrial environment, allowing for a wide range of applications. 

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