SI4835DDY-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 5.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1960pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	65nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	18 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction:The SI4835DDY-T1-GE3 is a n-Channel Enhanced-Performance trench metal-oxide-semiconductor field-effect transistor (MOSFET). This article describes its application field, and explains its working principle. Overview:The SI4835DDY-T1-GE3 is a MOSFET designed specifically for use in high-frequency and high-voltage applications, such as class-D audio amplifiers, power supplies and DC/DC converters. It features a low drain-source on-resistance (Rdson) and low gate charge (Qg). The device is housed in the TO-220 package, which is a 3-lead, surface-mount package. It has a drain-source current capability of 4.5 A (ID) and a maximum Drain-Source Voltage of 500V (VDS). Working Principle:The MOSFET works on the principle of the metal-oxide-semiconductor (MOS) phenomenon. It consists of two conductive layers, a source and a drain, separated by a thin insulating layer of silicon dioxide (SiO2). When a voltage is applied to the gate terminal, sufficient electrons are injected into the SiO2 layer, altering its electric field and allowing current to flow between the source and drain. The magnitude of the current flow is determined by the voltage applied to the gate and by the resistance of the channel and the channel length, as determined by the design of the device. Application Field:The SI4835DDY-T1-GE3 is an ideal device for a wide range of applications, such as:

• Class D Audio Amplifiers
• DC-DC Converters
• Power supplies, battery chargers, power management systems
• Circuit breaker applications

The device is suitable for use in various commercial and industrial fields, such as automotive electronics, consumer electronics, telecommunications and medical electronics. Conclusion:The SI4835DDY-T1-GE3 is a n-Channel Enhanced-Performance trench metal-oxide-semiconductor field-effect transistor which is ideal for a wide range of high-frequency and high-voltage applications. It works on the principle of the metal-oxide-semiconductor phenomenon, where a voltage applied to the gate terminal injects electrons into the SiO2 layer, thus allowing current to flow between the source and drain. The device is suitable for use in various commercial and industrial fields, such as automotive electronics, consumer electronics, telecommunications and medical electronics.

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