SI4896DY-T1-GE3

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The SI4896DY-T1-GE3 is a high voltage, low side, P-channel, PowerTrench MOSFET transistor. This MOSFET has a drain-source voltage rating of -400V and a drain-source current rating of -42A. It has a rugged, low profile package form that is particularly suitable for high speed switching applications, and also provides excellent ESD protection and good on-resistance RDS(ON).

The SI4896DY-T1-GE3 is a type of transistor known as a metal-oxide-semiconductor field effect transistor (MOSFET). In this type of transistor, the channel (or “gate”) has been designed such that the current flows between the source and drain only when an electric field is applied between the gate and source. When no external electric field is present, the current is prevented from flowing between the source and drain, allowing the transistor to act as an electronic switch.

Due to the low on-resistance RDS(ON) of the SI4896DY-T1-GE3 and its rugged, low profile package form, it is ideal for applications requiring high-frequency switching such as power supplies, switching regulators, mobile phones, and DC-DC converters. Additionally, the transistor’s low-side configuration lends itself well to circuits where the drain is connected to the ground/common. This configuration also offers improved noise immunity, making it an excellent choice for high-side switching, where the source is connected to the ground/common and the drain is connected to the load.

The SI4896DY-T1-GE3 also offers excellent ESD protection, making it suitable for use in high-traffic areas. The transistor is also RoHS compliant, making it an environmentally-friendly and cost-effective choice for many applications.

The SI4896DY-T1-GE3 is a versatile device that can be used in a variety of electronic devices. Its low profile package, low on-resistance RDS(ON) and excellent ESD protection make it an ideal choice for a variety of high-speed switching applications. It is also RoHS compliant and an environmentally-friendly choice for electronic design.

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