| Allicdata Part #: | SI4830ADY-T1-GE3-ND |
| Manufacturer Part#: |
SI4830ADY-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 30V 5.7A 8-SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 5.7A 1.... |
| DataSheet: | SI4830ADY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Base Part Number: | SI4830 |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 1.1W |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
| Series: | LITTLE FOOT® |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.5A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.7A |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Half Bridge) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI4830ADY-T1-GE3 is an integrated circuit module from the renowned Vishay Semiconductor\'s family of switching IGBTs and MOSFETs. It is a three-phase synchronous rectifier that isdesigned for electrical systems which need to switch high current flow and manage high peak load. By using this module, efficient power conversion can be achieved in applications such as electric grid stabilization, power factor improvement, power line communications, and active circuit detection.
The SI4830ADY-T1-GE3 is constructed out of a number of interconnected elements, including MOSFETs, power IGBTs, resistors, and capacitors. All of these elements together combine to create an efficient energy conversion switch that can manage large currents and peaks.
For starters, the switching element at the heart of the SI4830ADY-T1-GE3 is a three-phase IGBT array. This array is responsible for regulating the on-off switching of the energy flows. These IGBTs have optimized on-state resistance, and are specially designed to provide high switching speed and low switching losses.
To support the efficient and on-time switching of the IGBTs, the SI4830ADY-T1-GE3 also includes protective diodes. These diodes, located between the power lines and the switching elements of the module, provide an extra layer of protection against clipping and surge currents. As a result, the module can withstand high current without being affected.
On top of that, the SI4830ADY-T1-GE3 also includes a mix of prototyping elements, such as resistors and capacitors. These components help condition the energy flows to ensure stable switching and reduce energy losses. They also play a role in helping protect the device against short circuits and resistive-ringing-caused delays, by providing a low impedance path between the IGBT array and the external system.
Overall, the SI4830ADY-T1-GE3 is an advanced IGBT array module from Vishay Semiconductor that provides efficient and robust energy conversion for high current, high peak load applications. It combines optimized IGBTs, power resistors, and capacitors to achieve reliable switching and surge-current protection, enabling new possibilities for electric grid stabilization, power factor improvement, power line communications, and active circuit detection.
The specific data is subject to PDF, and the above content is for reference
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SI4830ADY-T1-GE3 Datasheet/PDF