Allicdata Part #: | SI4836DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4836DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 12V 17A 8-SOIC |
More Detail: | N-Channel 12V 17A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4836DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 400mV @ 250µA (Min) |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 25A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4836DY-T1-E3 is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low to medium power applications. It belongs to the Si48xxDY family of transistors and is field-effect controlled. This device is intended to replace larger devices like the JFET and bipolar transistor. It is capable of providing a high level of performance while consuming minimal power.
The SI4836DY-T1-E3 is capable of switching a nominal load of up to 75 amps and can handle voltages up to 40V. It is primarily used in switching applications, where it can control current through an output device, thus changing its state. Its gate voltage (Vgs) control input is logic-level compatible. When the gate voltage is increased above a certain threshold, the transistors channel between the source and drain becomes conductive, allowing current to flow through the channel.
The SI4836DY-T1-E3 can be used for a variety of applications, including motor control, audio/video amplifiers, power supplies, DC-DC converters, military and telecom systems and data communication. Applications that require bidirectional switching (i.e. batteries, motors, and other electronic circuits) can enhance efficiency and power control using this transistor. By controlling the voltage across the MOSFETs gate, the current running through the device can be controlled.
The working principle of the SI4836DY-T1-E3 is based on the principle of free-carrier injection. This device has a P-channel junction, which is formed when a positive potential is applied to the substrate. As such, free electrons in the substrate start to accumulate at the drain side of the substrate near the gate and form an inversion layer. When the gate voltage is further increased above the threshold voltage, a channel between the source and the drain is formed, thus allowing it to conduct. The MOSFET can then be used to control the current running through the channel.
The SI4836DY-T1-E3 is a versatile and efficient field-effect transistor for applications that require low to medium power and excellent performance. It can be used for a variety of applications, including motor control, audio/video amplifiers, power supplies, DC-DC converters, military and telecom systems and data communication. Its gate voltage control input is logic-level compatible, and it can handle load currents of up to 75A. When compared to other transistors like the JFET and Bipolar Transistor, the SI4836DY-T1-E3 offers many advantages like consuming minimal power and having a highly efficient gate control.
The specific data is subject to PDF, and the above content is for reference
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