SI4886DY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI4886DY-T1-E3 is a single enhancement mode N-Channel MOSFET manufactured by Vishay. This particular FET is made for high speed switching applications, requiring low gate threshold voltage and fast switching times. Further, this particular FET is rated for a provided drain current of 6 A and operate from -55°C to 175°C.

A MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a three-terminal semiconductor device utilizing a thin layer of metal oxide that acts as an electronically-adjustable dielectric layer between a metal gate electrode and a semiconductor material to control the flow of electrons between source and drain terminals. This type of transistor is also commonly classified as a Field-Effect Transistor (FET). A FET is a type of transistor which derives its operation from the electric field created between the gate and the source, to control the current from the source to the drain.

The SI4886DY-T1-E3, as mentioned above, is an enhancement-mode n-Channel MOSFET and operates on the enhancement-mode principle. In the event of the FET being in the OFF-state, no current is allowed to flow between source and drain until an appropriate voltage is applied to the gate electrode. This turns the MOSFET ON, allowing current to flow through the FET. The MOSFET also offers exceptionally low switch voltage and fast switching times.

The SI4886DY-T1-E3 has a wide range of application fields, including power supply control and switching, including DC-DC converters, high-side switches, level shift circuits, bidirectional levrlimiter control, load switches and other high speed switching applications. This wide range of application fields shows how the SI4886DY-T1-E3 is an excellent choice for a variety of applications.

The SI4886DY-T1-E3 is an example of a high speed switching MOSFET which combines the many advantages of both MOSFET and FET devices. It has a low drain-source resistance, low gate threshold voltage, high efficiency in switching and low power dissipation. Further, it offers high switching speeds, high reliability, and excellent thermal and power dissipation ratings.

In conclusion, the SI4886DY-T1-E3 is an excellent choice for a range of high speed switching applications. It is a single enhancement-mode N-Channel MOSFET, offering superior performance and reliability with improved power efficiency. Furthermore, due to its low gate threshold voltage, versatility and fast switching speeds, it makes an ideal solution for a range of applications including level shifters, DC-DC converters, high-side switch and so on.

The specific data is subject to PDF, and the above content is for reference