SI4860DY-T1-E3

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SI4860DY-T1-E3 is a single N-Channel enhancement more Field Effect Transistor (FET) with a low on-resistance. It is specifically designed for excellent power efficiency and high speed switching in high power levels. This makes it the perfect choice for applications such as motor control, power supplies, and other power switching solutions.

The main advantage of this FET is its low threshold voltage, which allows for higher efficiency when switching. With a low threshold voltage, power losses are minimized and the FET can switch faster, allowing for a much higher switching frequency. Additionally, its low on-resistance helps reduce current consumption and power consumption, which in turn improves efficiency.

The working principle of this FET is based on two main elements: the gate terminal and the drain terminal. The gate terminal is responsible for controlling the drain current through the FET. When the voltage is applied to the gate terminal, electrons flow from the gate terminal to the drain terminal, which creates an electric field between the gate and drain terminals. This electric field then alters the conductivity of the FET, allowing it to switch on or off.

The SI4860DY-T1-E3 has a drain-source voltage rating of 48V and a drain-source current rating of 60A. It is also capable of operating at temperatures ranging from -55°C to +150°C. With these features, this FET is well-suited for a variety of applications, including power supplies, motor control, and other power switching solutions.

The SI4860DY-T1-E3 can be used in applications requiring high speed switching, high efficiency, and low power consumption. It is an ideal choice for many power switching solutions, such as motor control, power supplies, and other power switching solutions. It is also suitable for applications that require compliance with lead-free and RoHS standards.

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