SI4850EY-T1-GE3

The SI4850EY-T1-GE3 is a single P-channel enhancement mode Field-Effect Transistor (FET) with a power MOSFET level of output. This transistor has a Geometry which creates a symmetrical structure around the drain-source with a compact footprint and improved electrical robustness. The SI4850EY-T1-GE3 is ideal for a wide range of applications, such as power switching and battery protection, voltage level-shifting, and charging and discharging current paths.

The SI4850EY-T1-GE3’s power MOSFET level of output helps to reduce current consumption and audio hum, avoid pops and other artifacts, and has superior overload protection compared to standard FETs. The MOSFET also has a higher voltage break down rating compared to standard transistors, and is more resistant to cross-over voltage impairment.

The SI4850EY-T1-GE3 has a unique construction which reduces noise and distortion. Its ESD protection is superior to standard FETs and its increased insulation makse it more robust. Conducted emission is improved due to the symmetrical structure around the drain-source, reducing interference from electronic devices.

The SI4850EY-T1-GE3 uses a P-channel enhancement mode MOSFET to enable high speed switching and superior overload protection. This transistor has a drain-source resistance of 14.5 ohms and a gate-source voltage of 9V which makes it ideal for applications requiring high speed and voltage level shifting. The transistor also features low power consumption, low on-state resistance, and a low on-resistance/high-voltage breakdown rating.

The SI4850EY-T1-GE3 is a versatile single P-channel enhancement mode FET commonly used in power switching and battery protection, voltage level shift and current paths. Its low on-resistance/high-voltage breakdown rating makes it an ideal choice for applications requiring high speed, voltage level shifting and low power consumption. The transistor has a symmetrical structure around the drain-source, reducing noise and distortion, and provides superior ESD protection compared to standard FETs. The SI4850EY-T1-GE3 is an excellent choice for applications requiring high speed switching and high voltage breakdown ratings.