SI4876DY-T1-E3

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The SI4876DY-T1-E3 is a super-junction MOSFET, which was developed as part of International Rectifier Corporation’s 45V family of device technologies. It is designed to provide excellent on-resistance, level shift and fast switching performance. The device is also designed to provide pulse current capability up to 2A.

The transistor has an operating temperature range of -40 to +125°C and an absolute maximum rating of 16V (gate to source). It is also capable of providing a gate voltage of +/- 15V and a drain current of ±2A. The device is available in a variety of packages, including SOT-23, PowerPAK SO8 and CIPSO.

The SI4876DY-T1-E3 is a high-performance MOSFET with a wide range of uses and applications. It is ideal for level shifting and power MOSFET applications where fast switching and low on-resistance is required. It can also be used in power management applications where pulse current and low input capacitance are desirable features.

The primary application field for the SI4876DY-T1-E3 is in high-frequency switching, power MOSFETs, and current source applications including battery chargers, power supplies, DC-DC converters, and gate drivers. It is also suitable for use in level shifters, high-side switches, and low-side switches.

The SI4876DY-T1-E3 is a high-performance MOSFET which is designed for use in a variety of circuits, including high-frequency switching, level shifters, high and low-side switches, and current source applications. The primary advantage of the device is its excellent switching performance, with low on-resistance, fast switching, and low input capacitance.

The working principle of the SI4876DY-T1-E3 is based on a junction field-effect transistor (JFET) and utilizes a depletion-mode operation. It works by allowing current to flow between the source and drain terminals when the gate voltage is below the threshold voltage (Vth) of the device. When the gate voltage is increased above the threshold voltage, the depletion region of the device expands, blocking current flow and allowing the device to be used as a switch.

The operating voltage range of the SI4876DY-T1-E3 is between -40 to +125°C. Although this device is designed to be capable of delivering its variation of pulses currents up to 2A, the maximum current ratings should be checked prior to using this device in any particular application. Furthermore, the maximum drain-to-source voltage should also be taken into consideration beforehand.

The SI4876DY-T1-E3 is a high-performance MOSFET which is designed for fast switching, low on-resistance, and low input capacitance. It is well suited for a variety of power management, level shifting, and high-frequency switching applications. Its wide range of operating temperatures and peak currents makes it well-suited for use in most modern applications requiring high levels of performance.

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