SI4896DY-T1-E3

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The SI4896DY-T1-E3 is a single N-channel enhancement mode field effect transistor (FET) designed for use in high-current, high-speed switching applications. It is a high power MOSFET developed using the company’s advanced trench device process technology.The device features a wide dual gate with a maximum gate width of 8.0 µm and provides low on-resistance, low drain-source voltage drop, and fast switching times. The device is housed in a TO-220 package and is available in both a through-hole and a surface mount configuration.

The SI4896DY-T1-E3 is designed for use in a wide range of applications, including DC-DC converters, motor drivers, load switching, relay drivers, DC power supplies, and battery chargers. It can also be used in high-efficiency, high-current switching applications.The device has a maximum voltage rating of 200V and a maximum drain current rating of 58A.

The SI4896DY-T1-E3 features a low on-resistance of 0.33Ω which allows it to operate with high efficiency.In addition, the device has a low drain-source voltage of 0.15V and a fast switching time of 30ns.The device has a high-temperature rating of 175°C, making it suitable for use in hot, high-temperature environments.

The working principle of the device is based on the principles of field-effect transistors.When a voltage is applied to the gate, an electric field is formed. This electric field causes a depletion zone in the substrate of the FET, allowing the current to flow through the channel between the source and the drain.The current flowing through the channel is controlled by the gate voltage (VGS), which can be adjusted to regulate the amount of current flowing through the channel.

The SI4896DY-T1-E3 is a reliable and efficient device for high-current, high-speed applications and can provide excellent performance in a variety of environments.The device’s low on-resistance, low drain-source voltage drop, and fast switching times make it an ideal choice for power control applications.

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