SI4850EY-T1

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The SI4850EY-T1, an n-channel enhancement-mode power MOSFET, offers low on-resistance performance in a small package due to its advanced On-Semiconductor process technology. This wide SOT-23 package device is ideal for applications such as off-line power supplies, high input current switching, DC/DC and AC/DC converters, and general switching applications.

The SI4850EY-T1 is based on the industry-standard JEDEC MO-187 package and is built using an advanced On-Semiconductor process technology. With an on-resistance of just 0.36Ω, it provides an excellent balance between power dissipation and power efficiency. The device also offers a maximum current rating of 8A and an input capacitance of 27.2 nC.

The SI4850EY-T1\'s working principle is based on the principle of gate-source voltage control. The device consists of a source, a drain, and a gate. When a positive voltage is applied to the gate, it attracts the electrons from the source and causes them to flow through the channel and into the drain. As the gate voltage increases, the current through the device increases as well. This current regulation is analogous to the way a resistor works, with the voltage controlling the amount of current that flows through it.

The SI4850EY-T1 can be used in a variety of applications such as off-line power supplies, high input current switching, DC/DC and AC/DC converters, and general switching applications. The device is well suited for polarity protection, reverse battery protection, automotive audio stop/start function, PTC to nTC conversion, power relays, motor control, display driving, battery switching, high-side current sensing, and many other applications.

The SI4850EY-T1 is designed to meet the stringent performance requirements of even the most demanding applications. Its high breakdown voltage rating of 40 V ensures that it can handle the highest voltages required by modern applications. The device also has a maximum operating temperature range of -55 °C to +150 °C, making it suitable for a wide variety of operating environments.

The SI4850EY-T1 is an ideal choice for applications requiring low on-resistance and thermal performance in an efficient package. Its small size, combined with its high current capacity and superior thermal performance, makes it particularly well suited for space-constrained systems. The device also offers excellent input capacitance and reverse-battery protection, making it a great choice for portable and automotive applications.

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