
Allicdata Part #: | SI4804BDY-T1-GE3-ND |
Manufacturer Part#: |
SI4804BDY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 5.7A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 5.7A 1.1W Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI4804 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4804BDY-T1-GE3 is a transistor array, specifically a type of Field-effect transistor (FET). FETs are a type of transistor that uses an electric field to control the flow of electrons in a semiconductor material. The SI4804BDY-T1-GE3 is a n-channel enhancement mode type FET containing two logic compatible source-gate sourced FETs, each with a gate drive capability of up to 10A and a maximum continuous drain current of 30A. It is designed to be used in automotive and industrial applications where a high current switching solution is required.
When compared to traditional transistors, FETs offer a number of unique advantages. Firstly, they are much smaller in size than traditional transistors and therefore take up much less space. Secondly, FETs have much lower switching losses than traditional transistors, which leads to increased efficiency of power devices. Finally, FETs have a much higher input impedance which makes them much more suitable for high-frequency applications.
In the SI4804BDY-T1-GE3, the two FETs are connected in series, forming a pair of stacked FETs. This arrangement allows current to flow through the two FETs without the need for additional circuitry. This reduces component count and makes the system more efficient. It is also capable of handling extremely high currents, allowing a maximum continuous drain current of 30A. Additionally, the thermal resistance of the device is very low, allowing for improved heat dissipation.
The FETs in the SI4804BDY-T1-GE3 are controlled by a logic compatible source-gate sourced. This means that the current through the FETs can be controlled either digitally, using logic signals, or analog signals. This allows the device to be used in applications that require high levels of precision and control. Additionally, the device package includes a built-in gate drive circuit, allowing for even greater levels of control.
The SI4804BDY-T1-GE3 is a highly reliable transistor array that is suitable for a wide range of applications. It is an ideal choice for automotive and industrial applications where a high current switching solution is required. Additionally, the low thermal resistance and high precision control makes the device an excellent choice for applications requiring high levels of performance. The device is easily integrated with other components and is capable of withstanding extreme levels of vibration and shock.
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