SI4804CDY-T1-GE3

Vgs(th) (Max) @ Id:	2.4V @ 250µA
Base Part Number:	SI4804
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	3.1W
Input Capacitance (Ciss) (Max) @ Vds:	865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	22 mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C:	8A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Standard
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction:

SI4804CDY-T1-GE3 is a product of semiconductor technology, categorized as a transistor-FETs, MOSFETs-arrays. The device’s architecture is 64-arrayed with each having 4 power MOSFET cells with 60V drain source breakdown. It can be used in the field of power conversion and motor drive control where it can be used to both provide current control and low voltage voltage reduction.

Application field:

The SI4804CDY-T1-GE3 is used in a variety of fields including, automotive, industrial, consumer, and computer power supplies. It has two distinct advantages compared to other devices; first, it can be used both as a current controller and as a low noise voltage reducing device. Second, it increases power efficiency and reduces the amount of heat dissipated in the system by promoting a more optimized switching speed.

In automotive applications, the SI4804CDY-T1-GE3 is used for an efficient power management for car audio and air conditioning systems, as well as for efficient power management and cost reduction in other automotive systems such as electric windows, motor control and engine control. It is also favored for automotive power supplies due to its low slew rate and low on-resistance characteristics.

In the industrial field, the SI4804CDY-T1-GE3 is used in fan control, temperature regulation, lighting control and AC/DC current conversion. It also finds application in ATMs, photocopiers, and vending machines. The integrated overvoltage protection in the device also makes it reliable for these applications.

In the consumer field, most telephones and portable devices now are powered by the SI4804CDY-T1-GE3 for the low voltage conversion and extend battery life. In addition, it can be used in the medical field for data acquisition applications and cardiac pacemakers.

Finally, in the computer field, the SI4804CDY-T1-GE3 is used in high-end servers, servers and peripherals to regulate the +12V rail current. It contributes to a highly efficient system, reducing the amount of waste heat generated and improving power efficiency.

Working Principle:

The SI4804CDY-T1-GE3 contains 64 arrays of gate source and drain gate source cells, each equipped with a gate, source and drain. The device has an integrated overvoltage protection feature that helps to protect against any transient event. The voltage reduction feature is facilitated by the low level of static on-resistance of the cells and the low level of input capacitance.

The SI4804CDY-T1-GE3 works as a low voltage voltage conversion cell to reduce the voltage from the +12V rail to the required voltage for the system. By driving the gate-source cell, the drain-gate and the drain-source capacitances of the MOSFET are diverted between the two ends of the cell. The voltage reduction works on the principle of the faster the cell is switched, the smaller the voltage difference between the two ends of the cell will be. Consequently, the drain-gate voltage at the end of the cell is smaller than at the beginning, resulting in a voltage reduction. This also explains why the device has a low opstant. The higher the fastness of the cell switch, the smaller the voltage difference and the lower the opstant.

In addition, the cells that make up the device also provide current control, with the cell functioning as an open loop switch. By driving the cell, the current flowing between the source and the drain is effectively switched on and off. The high-level of on-resistance of the cell also aids in current control as well as heat dissipation.

A further advantage of the SI4804CDY-T1-GE3 is its low sensitivity in noise. This makes it ideal for use in automotive and industrial systems, where high levels of electrical noise often occur. The low noise feature also helps to reduce the size of the system and its power consumption.

Conclusion:

SI4804CDY-T1-GE3 is a 64-arrayed power MOSFET cell device with 60V drain source breakdown, designed for electrical and thermal efficiency in a wide range of automotive, industrial, consumer and computer applications. Its integrated overvoltage protection and low noise features offer further advantages to its users. Its low on-resistance and voltage reduction properties offer current control and low voltage voltage reduction, while its current control features can provide efficient power management and cost reduction. By combining the above features, the SI4804CDY-T1-GE3 can help enhance the performance and efficiency of various systems without the need for bulky and expensive components.

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