SI4834BDY-T1-E3

Vgs(th) (Max) @ Id:	3V @ 250µA
Base Part Number:	SI4834
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.1W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	22 mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C:	5.7A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SI4834BDY-T1-E3 is a high-frequency, multiple-output device designed to deliver a high level of performance. This device functions as a MOSFET array designed to reduce signal radiation, improve common-mode noise rejection, and provide logic level drive capability. The array of transistors has a built-in layout with specific properties and features that make it suitable for a variety of functions. Its applications include parameter switching, power management, and data transmission. This device operates in a common source mode using a single or dual transistor circuit depending on the specific application. In the single transistor circuit, the gate is connected to the source, and the drain is connected to the output terminal. The circuit operates at a preset voltage, typically around 2.5 Volts. In the dual transistor circuit, the gate and drain of the first transistor is connected to the source, while the drain of the second transistor is connected to the output terminal. This circuit performs at twice the preset voltage as the single transistor circuit.The SI4834BDY-T1-E3 offers a wide range of AC and DC applications. In AC applications, it is used for static switching, while in DC applications it is used as a power switching device. This device is also used as a voltage regulator and regulator of current in DC applications.The basic principle of operation of this device is the same as that of other MOSFETs. An input signal is applied to the gate of the transistor, which controls the voltage and current. The input signal is also capable of controlling the width of the channel in the gate oxide. As the width changes, the resistance of the gate oxide changes and therefore the current through the transistor changes accordingly. The SI4834BDY-T1-E3 has the ability to reduce signal radiation because of its low capacitance and its ability to reject common-mode noise. Its low capacitance helps to reduce the amount of high frequency radiation that is radiated from this device. Its common-mode rejection also helps to ensure a quieter environment for the application. As such, it is especially useful for applications where signal integrity is of the utmost importance. The SI4834BDY-T1-E3 is also capable of providing logic level drive capabilities. This means that it can be used to control low-voltage, low-current signals, such as those found in digital circuits. This is achieved by being able to provide a low on-resistance and a low threshold voltage. This logic level drive capability is essential for many digital applications. In conclusion, the SI4834BDY-T1-E3 is a high-frequency, multiple-output device with a built-in layout that allows it to offer numerous AC and DC applications. Its improved common-mode noise rejection, low capacitance and logic level drive capabilities make it ideal for applications where signal integrity is of the utmost importance.

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