SIHA15N60E-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHA15N60E-E3 is a transistor of the FET (Field-Effect Transistor) and MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) type. It is a single device designed primarily for use in power electronic applications. This transistor can be used in applications such as on-off switches, motor and actuator control, DC-DC converters, and power distribution. The SIHA15N60E-E3\'s application field includes a wide range of industries, including automation, robotics, automotive, industrial, and renewable energy systems.

The SIHA15N60E-E3 is a lateral N-Channel MOSFET with a breakdown voltage of 600V, drain current of up to 15A, and maximum power dissipation of 64.5W. Its gate-source threshold voltage ranges from 2.2V to 4.5V, making it suitable for numerous switching applications. The SIHA15N60E-E3 is also RoHS-compliant and has a Thermal Resistance Junction-to-Case of ƽ1.7°C/W.

The SIHA15N60E-E3 comes in a TO-220 package and is suitable for applications operating in temperatures between -55°C and +175°C. It can also be used with a wide range of power supplies, including 3V, 5V, 12V, and 15V input signals. The device also features an HS-FET (high-speed FET) technology that improves switching performance, enabling faster switching times, lower thermo-electrical noise, and higher current and power density.

The working principle of the SIHA15N60E-E3 is based on the phenomenon known as field-effect conduction. In this device, an electric field created by applying a voltage to the gate terminal can modify the conductivity of an N-type channel region between the drain and the source. When a voltage is applied to the gate terminal, an electric field is created which modifies the N-type channel and the device accordingly changes its conduction state. This phenomenon is known as the “gate control” effect, which results in current conduction between the drain and the source terminals.

In the ON position, the SIHA15N60E-E3 allows current to pass through it and the device conducts electricity. When the device is in the OFF position, the gate voltage has been reduced to zero and the device no longer conducts electricity. The device can be used to control the flow of electrical current, allowing power electronics applications to be activated and deactivated with precision.

In summary, the SIHA15N60E-E3 is a lateral N-Channel MOSFET that has been designed for power electronic applications, allowing for precise activation and deactivation of the flow of electrical current. The device uses the principle of field-effect conduction, in which an electric field created by a voltage applied to the gate terminal modifies the conductivity of an N-type channel region between the drain and the source and thus changes the conduction state of the device. The SIHA15N60E-E3 is suitable for a wide range of applications, including on-off switches, motor and actuator control, DC-DC converters, and power distribution.

The specific data is subject to PDF, and the above content is for reference