SIHA24N65EF-E3

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The SIHA24N65EF-E3 is a high-speed, low-voltage power MOSFET made with advanced power semiconductor technology to meet the demanding requirements of modern electronic systems. It is a n-channel, insulated gate power MOSFET with a Kynar (PVF) package. This device is designed for low-power applications such as consumer electronics, power supplies, and motor controls.

An insulated gate power MOSFET, also known as an IGFET or power MOSFET, is a field-effect transistor (FET) that is designed in such a way that it can be operated and switched at much lower voltages and higher frequencies than traditional FETs. The key feature of a power MOSFET is its ability to be used to control power in a system. It is often used to switch DC power in a system and can be controlled with a simple logic signal.

The SIHA24N65EF-E3 is designed for low-power applications, providing high current capacity and low on-state resistance (RDS(on)). It has a maximum drain-source voltage (VDS) of 24V, a maximum drain current (ID) of 65A, and a maximum continuous gate voltage (VGS) of 20V. It also has a maximum gate-source voltage (VGS) of 20V and a drain-source on-state resistance (RDS(on)) of 0.0065Ω. It is capable of a maximum power dissipation (PD) of 224W.

The working principle of a power MOSFET is based on its gate-induced drain leakage property. This means that it requires an electrical current to flow between the gate and the drain in order to turn the MOSFET on. When a gate voltage (VGS) is applied to the gate of a power MOSFET, it creates a thin of charge carriers (electrons or holes) at the interface between the source and the drain. This creates an inversion layer that enables the MOSFET to conduct current from the source to the drain with very low resistance.

In order to turn the MOSFET off, the gate voltage (VGS) needs to be reduced to below the threshold voltage (Vth). This reduces the inversion layer, making it impossible for the charge carriers to flow between the source and the drain, resulting in an off condition.

The SIHA24N65EF-E3 is ideally suited for applications such as consumer electronics, power supplies, and motor controls where high current capacity, low on-state resistance, and low power dissipation are desired. This device has also been specifically designed for low-power applications such as LCD TVs and power management.

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