SIHA6N80E-GE3

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The SIHA6N80E-GE3 is an N-Channel enhancement-mode power MOSFET designed specifically for industrial, medical, and automotive markets. With a maximum L(T)D of 8 W/mK, it provides excellent thermal conductivity and power dissipation. The SIHA6N80E-GE3 is also characterized by its low RDS(on) (0.81 Ω max), and wide VDSS ranging from 600 V to 800 V for 3 different packages. This makes it a great choice for high-voltage applications.

Application Field

The SIHA6N80E-GE3 has a variety of application fields in different sectors, ranging from motor control, lighting, audio and visual entertainment systems, to wind turbine and gas turbine generators. It can also be used in applications such as hard switch control, uninterruptible power supplies (UPS) and rectifier circuits. It also features excellent switching characteristics due to its low capacitance and charge balance. Furthermore, its excellent on-resistance and low thermal resistance make it a great choice for power-management applications as well.

Working Principle

The SIHA6N80E-GE3 is an N-channel MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. It works by controlling the flow of electrons between source and drain terminals with the help of the gate. The gate is an insulated terminal which, when triggered, applies a voltage to the source which increases or decreases the channel resistance. This changes the current in the channel depending on the voltage applied at the gate terminal.

When a positive voltage is applied to the gate, it creates an electron depletion region at the drain side and an electron free channel is formed. This channel forces the electrons to move from the source to the drain, allowing a current to flow from the drain to the source. Conversely, when a negative voltage is applied to the gate, the electron depletion region blocks the electron flow and the channel is closed. This prevents the current from flowing from the drain to the source.

The SIHA6N80E-GE3 has excellent switching characteristics due to its low input/output (I/O) capacitance and charge balance. Its charge balance provides a fast switching speed and less switching losses, which allow for superior efficiency in power-management applications. Furthermore, its low capacitance results in low power dissipation, low EMI, and better ESD performance.

In conclusion, the SIHA6N80E-GE3 is an ideal choice for high-power applications due to its wide VDSS range, low RDS(on), and excellent thermal performance. Its fast switching speed combined with its low capacitance and charge balance makes it suitable for applications such as motor control, lighting, audio, and visual entertainment systems. It can also be used in power-management applications due to its low power dissipation and low EMI.

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