SIHA4N80E-GE3

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The SIHA4N80E-GE3 is a type of insulated gate bipolar transistor (IGBT) that is commonly used in a variety of applications. It is a single-channel, N-channel insulated gate, unipolar junction field effect transistor (MOSFET). The SIHA4N80E-GE3 is designed with a hefty 800V (±20V) breakdown voltage rating and an on-resistance of 130 mΩ at 25°C, making it suitable for a broad range of applications.

Application Fields

The SIHA4N80E-GE3 is suitable for a variety of applications, such as motor drives and control, power supplies, and digital home appliances. It is also used in automotive and industrial applications, including lighting, home appliances, renewable energy, and electric vehicles. Due to the device’s high voltage and low on-resistance, it can be used to efficiently regulate high power levels. Additionally, the SIHA4N80E-GE3 can be used in DC-DC converters, solar panels and other renewable energy applications, and power electronic systems, among other applications.

Working Principle

The SIHA4N80E-GE3 is a N-channel insulated gate unipolar junction field effect transistor (MOSFET). It is essentially a three-terminal electrical device, consisting of a source, a gate, and a drain. The source and drain are the two ends of the channel and correspond to the power input and output terminals. The gate is used to control the amount of current flowing through the channel. When a small voltage is applied to the gate terminal, this causes the MOSFET to turn “on”, allowing a high amount of current to pass through the device. When the gate voltage is reversed, the device is switched “off”, reducing the current through the channel.

The SIHA4N80E-GE3 is composed of two N-type junction field-effect transistors (JFETs) arranged in an insulated gate bipolar transistor (IGBT) configuration. These JFETs are arranged back-to-back in the structure, with the insulated gate voltage controlling both transistors’ respective current flow in opposite directions. The IGBT is connected between the drain terminals, and its insulated gate acts as a bridge to control the current between the source and the drain. The MOSFET can be used for both static and dynamic switching applications.

In static applications, the SIHA4N80E-GE3 is used to switch the field-emitter or field-collector paths. When the device is “on”, current can flow through the transistor between the source and drain. When the device is “off”, no current can pass through the transistor. In dynamic applications, the device is used to regulate the current through the transistor by switching the insulated gate voltage.

The SIHA4N80E-GE3 provides excellent performance with a robust breakdown voltage of 800V (±20V) and low on-resistance of 130mΩ at 25°C. Additionally, the device offers superior switching performance over other IGBTs and MOSFETs in its class. This makes it suitable for a range of applications, including motor drives and control, power supplies, digital home appliances, automotive and industrial applications, renewable energy, and electric vehicles.

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