SIHA20N50E-E3 Allicdata Electronics
Allicdata Part #:

SIHA20N50E-E3-ND

Manufacturer Part#:

SIHA20N50E-E3

Price: $ 2.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 19A TO-220FP
More Detail: N-Channel 500V 19A (Tc) 34W (Tc) Through Hole TO-2...
DataSheet: SIHA20N50E-E3 datasheetSIHA20N50E-E3 Datasheet/PDF
Quantity: 56
1 +: $ 2.13570
10 +: $ 1.92717
100 +: $ 1.54860
500 +: $ 1.20448
1000 +: $ 0.99800
Stock 56Can Ship Immediately
$ 2.35
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 184 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHA20N50E-E3 is a silicon N-channel MOSFET transistor from STMicroelectronics’ Power MOS family. It is designed for applications that require very low gate charge, low gate input capacitance and low on-state resistance. This automotive-grade power MOS FET can provide over 20A of continuous drain current and is fully compliant with the most stringent automotive quality standard AEC-Q101. This device’s Auto-Tuning technology uses adaptive body bias for improved effiency and robustness across varying loads, temperature and power supplies, making it suitable for a wide range of automotive applications. Let’s take a look at the SIHA20N50E-E3’s application field and working principle.

Application Field

The SIHA20N50E-E3 is ideal for use in automotive powertrain and motor control applications where fast switching and low on-state resistance is required. These automotive applications include DC-DC converters, DC motor drives, active front-end rectifiers, as well as converter bridge circuits used in many electric and hybrid electric vehicles. It can also be used in other switching power conversion applications such as switchmode power supplies and consumer electronics.

Working Principle

The SIHA20N50E-E3 is a type of MOSFET transistor, which is a type of field effect transistor (FET). FETs are voltage controlled devices, meaning their conductance between the source and drain terminals can be controlled by an electric field applied by a gate terminal. In the case of the MOSFET transistors, the gate is insulated from the rest of the device by a very thin layer of insulating material (typically silicon dioxide). This insulation layer allows for the gate voltage to control the conductance of the device with no current flow through the gate terminal.

When the gate voltage of a MOSFET is increased, the electric field strength in the insulation layer also increases. This results in a greater conductance between the source and drain terminals, allowing more current to flow between them. By adjusting the gate voltage, it is possible to precisely control the current flow between the source and drain terminals.

The SIHA20N50E-E3 is able to provide over 20A of continuous drain current and is also capable of very fast switching. This is due to its low gate input capacitance, which helps to reduce the amount of time required for charging and discharging of the gate voltage. Its low on-state resistance also helps to reduce power loss associated with conduction.

The SIHA20N50E-E3 has also been designed with STMicroelectronics’ Auto-Tuning technology. This technology utilizes an adaptive body bias, which adjusts the threshold voltage of the device depending on the load, temperature and power supply. This helps to ensure that the device can operate reliably and efficiently across varying conditions.

Overall, the SIHA20N50E-E3 is an ideal choice for automotive powertrain and motor control applications due to its low gate charge, low gate input capacitance, low on-state resistance and Auto-Tuning technology. It is also well-suited for many other switching power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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