SIHA6N65E-E3 Allicdata Electronics
Allicdata Part #:

SIHA6N65E-E3-ND

Manufacturer Part#:

SIHA6N65E-E3

Price: $ 1.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHANNEL 650V 7A TO220
More Detail: N-Channel 650V 7A (Tc) 31W (Tc) Through Hole TO-22...
DataSheet: SIHA6N65E-E3 datasheetSIHA6N65E-E3 Datasheet/PDF
Quantity: 678
1 +: $ 1.47420
10 +: $ 1.33056
100 +: $ 1.06936
500 +: $ 0.83173
1000 +: $ 0.68914
Stock 678Can Ship Immediately
$ 1.62
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Series: E
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHA6N65E-E3 is a n-channel enhancement-mode MOSFET developed with silicon gate technological process. ON Semiconductor designed this MOSFET in its SOT-223 package. It is an affordable and reliable solution for power management applications. The maximum current SOA (safe operating area) is 42A Peak at Tj = 25°C and Vgs = 10V. It typically features a drain to source breakdown voltage of 600 V. Other specifications such as Vgs(th) and Rds(on) max ratings may vary between devices. The SIHA6N65E-E3 can be used in many applications where controlling high current is required. It can be used in battery-operated circuits to control the load. In addition, the SiHA6N65E MOSFET can be used for the switching of motors, pre-amplifier stages, and high-power audio amplifiers.The working principle of this MOSFET is quite simple. When no gate voltage is applied, the drain voltage is zero and there is no current flow through the channel. When a positive voltage is applied to the gate terminal, the drain voltage reduces at a linear rate, allowing current to flow through the channel. In this situation, the MOSFET channel is in the saturation region. A further increase in gate voltage will start to increase the drain current and the MOSFET is said to be in the linear region. When the gate voltage is too high, the device will start to behave like an open diode and the channel will be in the cutoff region.

The SIHA6N65E-E3, is also ideal for high-power HV LED drivers and DC-DC converters. The chip features a wide operating temperature range, low threshold voltage, and low gate-source capacitance, making it suitable to use for Power Factor Correction (PFC) and buck topology systems. It also experiences little "on" resistance rise over generated power.

The SIHA6N65E-E3 is a high-power MOSFET with superior performance compared to traditional MOSFETs. This MOSFET can handle over 42 amperes of continuous current, making it ideal for high-power applications such as the switching of motors, pre-amplifiers, and audio amplifiers. Due to its linear operation, the SIHA6N65E-E3 can be easily used in adjustable power supplies and for controlling the load in battery-operated circuits. In addition, its low threshold voltage, high drain-source breakdown voltage, and wide operating temperature range make it suitable for use in HV LED drivers and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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