SIHA18N60E-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHA18N60E-E3 is a high-voltage and high-speed insulated gate bipolar transistor (IGBT) from SIHA series created by the Manufacturer SIHA. This cutting-edge technology offers maximum convenience and performance to electronic engineers looking for superior technology to power their applications. It is designed for fast switching applications and has a robust structure and efficient Gate-Collector and Gate-Emitter diodes heavily integrated inside the package.

The wide range of applications of SIHA18N60E-E3 can be categorized into four application fields: power conversion, motor control, welding, and industrial applications. Power conversion applications include high-frequency switching, power factor correction, and pulse-width modulation (PWM) control. At the same time, it is also an ideal choice for three-phase motor control, small UPS systems, and other motor control systems due to its advanced structure and superior performance. Furthermore, the advanced SIHA18N60E-E3 IGBT can be used in DC welding, vibration reducing welding, ultrasonic welding, and other industrial welding applications.

Electronic engineers will likely be curious about the working principle behind the SIHA18N60E-E3. The IGBT technology is a combination of a metal-oxide semiconductor field-effect transistor (MOSFET) and a bipolar transistor, and as such, has both the advantages of both. The metal-oxide insulating layer functions as a gate conductor of the MOSFET and enables the device to be switched on and off with signals, while the base of the transistor functions as the emitter terminal, enabling the current-control operation of the device. This makes it possible to switch high voltages at high speeds with greater control, resulting in a better overall performance.

Other features of the SIHA18N60E-E3 include a temperature range of -40°C to +125°C, a maximum collector-emitter voltage (VCEO) of 600V, and a frequency range of 20kHz to 500kHz. It also features a soft switching function which eliminates switching loss and minimizes EMC problems. It is packaged in the TO-220FP package which is compact and provides easy installation. Overall, the SIHA18N60E-E3 is an outstanding IGBT for a wide range of high-performance applications, which is made highlighting its advanced working principle.

The specific data is subject to PDF, and the above content is for reference