SIHA25N50E-E3 Allicdata Electronics
Allicdata Part #:

SIHA25N50E-E3-ND

Manufacturer Part#:

SIHA25N50E-E3

Price: $ 1.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 26A TO-220FP
More Detail: N-Channel 500V 26A (Tc) 35W (Tc) Through Hole TO-2...
DataSheet: SIHA25N50E-E3 datasheetSIHA25N50E-E3 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.16645
Stock 1000Can Ship Immediately
$ 1.3
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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For any electrical circuitry application, it’s important to have a device that can convert energy from one form to another. Transistors, commonly known as MOSFETs and FETs, are one of the most important components in circuit designs and are used to regulate the flow of electrical current. They are incredibly versatile and are used in any electronic application, ranging from common industrial applications to telecommunications and computer components. The SIHA25N50E-E3 is a single transistor that is one of the most widely used in the electronics industry. This article will discuss the application field and working principle of the SIHA25N50E-E3.

The SIHA25N50E-E3 is a field-effect transistor (FET) used mainly for industrial and commercial applications that require high input and output voltages. It is a power MOSFET designed for use in power circuit systems, and it is comprised of a diode, a N-channel MOSFET, and a voltage regulator. As an N-channel power MOSFET, it has a high breakdown voltage, excellent linearity and low noise operation. It also has a very low RDS(on) compared to other mosfets, so it is able to pass large amounts of current with relatively low losses.

The SIHA25N50E-E3 can be used in a variety of applications, such as motor control, high voltage power supplies, and power converters. It is also used in switch mode power supplies, where it is connected to the primary side of the transformer. This allows the power supply to be switched between two different power supply levels, helping provide better efficiency. Additionally, it is often used in lighting circuits and in applications that require high-frequency switching.

The SIHA25N50E-E3 is a single N-channel MOSFET, which means that it allows current to flow in one direction. In order for the transistor to operate, voltage must be applied to the gate terminal. Applying a positive voltage to the gate terminal will cause the MOSFET to turn on, while a negative voltage will cause it to turn off. The voltage required to turn the transistor on and off is known as the gate threshold voltage. The transistor will only function when the voltage on the gate terminal is greater than the gate threshold voltage.

The SIHA25N50E-E3 is a very versatile and reliable transistor. It is capable of operating at high levels of current and voltage, making it suitable for a wide range of applications. It is strong enough to be used in automotive, home, and industrial settings, making it one of the most commonly used transistors in electronics.

The SIHA25N50E-E3 provides excellent power efficiency and is easy to use. Its simple operation and versatile design makes it a popular choice for many applications, and it is sure to remain a standard in the electronics industry for many years to come.

The specific data is subject to PDF, and the above content is for reference

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