SIJ400DP-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Ta), 69.4W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7765pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	4 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Transistors - FETs, MOSFETs - Single

The SIJ400DP-T1-GE3 is a part of the GaN transistor family. It is a single-nickel-on-sapphire (NiS) transistor with a maximum power rating of 5W and a maximum operating temperature range of 125° C. This device is designed to switch and regulate high-power RF signals with efficiency and consistent performance under varying environmental conditions.The SIJ400DP-T1-GE3 is an advanced structure that fortifies the operation of any high-frequency power management system, in which the device is switched at a high frequency. Its performance is not affected by the varying environmental conditions typically encountered in such systems, as the device is implemented with a nickel on a sapphire substrate. The use of this particular construction ensures that the switch is reliable and efficient.The device is composed of a base, gate, and source. The base and gate are connected through an oxide semiconductor layer which acts as an insulator. The source is connected to a power source and the gate is connected to an input signal for the purpose of controlling the output current. The operation of the FET is mainly based on the principle of electron mobility, as the flow of electrons is controlled through the gate and the source/base junctions are used as resistors.When a signal is applied to the gate of the FET, it induces a variable electric field which deforms the Insulator’s electron band structure and results in a net drift of the mobile electrons. This drift of the electrons across the gate separates the charges and makes the application of the FET a variety of previously impossible electrical applications. The electron mobility principle also ensures that only a small signal is required to achieve a large current across the gate, resulting in reliable and efficient operation.The main application of the SIJ400DP-T1-GE3 is for switching, controlling and regulating high-frequency power signals. It can be used for power management in various electronic systems, such as in data centers, solar installations and other computer applications. It can also be used for RF power amplifier design and integrated circuits. The device has a low operating temperature, as well as low voltage and high-power dissipation capabilities, making it suitable for a variety of power applications.The main features of the SIJ400DP-T1-GE3 include single-nickel-on-sapphire constructions, high maximum powered rating of 5W, low voltage consumption and high-power dissipation abilities, a maximum operating temperature range of 125° C, and a small signal ability. Its application field and working principle make it useful in a variety of power management and power conversion applications which rely on controlling and switching high-frequency power signals.

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