SIJ438DP-T1-GE3

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The SIJ438DP-T1-GE3 is a single-gate metal-oxide-semiconductor field-effect transistor (MOSFET) suitable for use in a wide range of applications. It is designed and manufactured to meet the requirements of industrial and automotive applications, such as those involving high-current and high-power switching, as well as low- and high-frequency circuits. With its excellent on-state characteristics, the SIJ438DP-T1-GE3 is suitable for use in a variety of applications, including boosting, switching, low-power LED lighting, and power conversion.

The SIJ438DP-T1-GE3 features a single gate structure, which allows it to easily control the drain-to-source voltage. This makes it ideal for use in low-current and high-power switching applications. It also allows for switching at higher frequencies, which is perfect for applications that require fast response times. Furthermore, the excellent on-state characteristics of the SIJ438DP-T1-GE3 make it suitable for use in boost-type converters.

To understand the working principle of the SIJ438DP-T1-GE3, it is important to understand the theory of MOSFETs. In a MOSFET, a voltage is applied to the gate terminal to control the electric current that flows between the source and the drain terminals. When a positive voltage is applied to the gate, the MOSFET turns ON and a current will flow between the source and the drain. Conversely, when the gate voltage is reduced or equal to zero, the MOSFET turns OFF and the current flow is stopped. In this way, the SIJ438DP-T1-GE3 can be used to control the flow of current in a range of applications.

The SIJ438DP-T1-GE3 offers an excellent combination of low on-state resistance, high breakdown voltage, and logic-level gate drive support. It also features a Thermal Field-Effect Latch (TFEL) that prevents current runaway when the temperature of the device exceeds a certain level. This makes it perfect for use in automotive, industrial and consumer applications where safety is critical.

The SIJ438DP-T1-GE3 is rated for up to 25A of continuous drain current at 25 degrees Celsius, with a maximum on-state drain-source voltage of 45 volts. It also features a maximum drain gate voltage of +-20V, and a maximum gate threshold voltage of +-2.2V. Furthermore, the device has a very low on-resistance of just 100 milliohms, making it ideal for use in high-current applications.

The SIJ438DP-T1-GE3 is an excellent choice for use in a range of applications due to its combination of excellent on-state characteristics, high drain current rating, and low on-state resistance. With its low gate threshold and high breakdown voltage, it is perfect for switching applications, low-power LED lighting, and power conversion. Furthermore, the device\'s thermal safety features make it suitable for use in automotive, industrial, and consumer applications where safety is critical. The SIJ438DP-T1-GE3 is available in a variety of packages, making it easy to utilize in a range of designs.

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