SIJ484DP-T1-GE3

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A SIJ484DP-T1-GE3 is an n-Channel Enhancement Mode Silicon Controlled Rectifier Field Effect Transistor (FET), which is available in the industry standard TO-252 package. The SIJ484DP-T1-GE3 is a low drain-source on-state resistance, low gate-source threshold voltage, and high-frequency switch. With its reliable, cost-effective solution to high-speed, high-power switching applications, the SIJ484DP-T1-GE3 has become a popular choice for a variety of operational needs.

Application Field

The SIJ484DP-T1-GE3 has been designed for use in high-speed, high-power switching applications where reliable performance and simple design are paramount. In particular, this part has been designed for use in applications that require low interference, high frequency switching. This would include industrial applications such as switch mode power supplies and motor control systems.

The component is rated to operate at 1.8 volts to 15 volts with drain currents of up to 8.1 Amps. The component is also capable of operating at high frequencies of up to 3GHz and at a temperature range of -55°C to +150°C. Additionally, the component is extremely efficient, boasting typical gains of 70 VP-P and a typical transition frequency of 264 MHz.

Working Principle

The SIJ484DP-T1-GE3 works on the Field Effect Transistor (FET) principle. A FET is an unipolar, semiconductor device whose operation relies on the electric field created by the diode or “gate” portion of the device. This electric field controls the “channel”, or the conductive path, between the source and the drain of the component. When a current is applied to the gate, the electric field which is generated increases the conductivity of the channel, allowing current to flow from the source to the drain.

Once a voltage is applied to the gate, the current begins to flow, however, as the gate voltage increases, the resistance of the channel decreases until it is virtually eliminated. This allows for the fast, efficient operation of the device. In addition, this design also allows for the device to operate at very high frequencies, making it well suited for the applications it was designed for.

Conclusion

The SIJ484PD-T1-GE3 is a great choice for high-speed, high power switching applications, thanks to its low drain-source on-state resistance and low gate-source threshold voltage, in addition to its extremely high frequency switching capabilities. With its reliable and cost effective design, the SIJ484PD-T1-GE3 is well suited for multiple uses, including switch mode power supplies and motor control systems.

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